Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-29T07:50:44.993Z Has data issue: false hasContentIssue false
  • English
  • Français

Theory of DX Centers in AlxGa1-x Alloys

Published online by Cambridge University Press:  25 February 2011

D. J. Chadi  and
S. B. Zhang
D. J. Chadi
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
S. B. Zhang
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
Get access

Abstract

A theoretical model for DX centers which explains their unusual electronic properties in terms of two distinct bonding configurations for donor impurities in AlxGa1-x As alloys is examined. The results of our ab initio self-consistent pseudo-potential calculations show that for x > ≃20%, the normal fourfold coordinated substitutional site becomes unstable with respect to a large lattice distortion. The model explains the large difference between the thermal and optical ionization energies of DX centers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 765
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Lang, D. V. and Logan, R. A., Phys. Rev. Lett. 39, 635 (1971).Google Scholar
2 Lang, D. V., Logan, R. A., and Jaros, M., Phys. Rev. B 19,1015 (1979).Google Scholar
3 Mizuta, M., Tachikawa, M., Kukimoto, H., and Minoura, S., Jpn. J. Appl. Phys. 24, L143 (1985); M. Tachikawa, T. Fujisawa, H. Kukimoto, A. Shibata, G. Oomi, and S. Minomura, ibid. 24, L893 (1985).Google Scholar
4 Li, M. F., Yu, P. Y., Weber, E. R., and Hansen, W., Appl. Phys. Lett. 51, 349 (1987); Phys. Rev. B 36, 4531 (1987).Google Scholar
5 Shan, W., Yu, P. Y., Li, M. F., Hansen, W. L., and Bause, E., Phys. Rev. B 40, 7831 (1989).Google Scholar
6 Theis, T. N., Mooney, P. M., and Wright, S. L., Phys. Rev. Lett. 60, 361 (1988).Google Scholar
7 Chand, N., Henderson, T., Klem, J., Masselink, W. T., Fischer, R., Chang, Y. C., and Morkoς, H., Phys. Rev. B 30,4481 (1984).Google Scholar
8 Mooney, P. M., Northrop, G. A., Morgan, T. N., and Grimmeiss, H. G., Phys. Rev. B 37,8298(1988).Google Scholar
9 Theis, T. N., Kuech, T. F., Palmateer, L. F., and Mooney, P. M., in Gallium Arsenide and Related Compounds -1984, Inst. Phys. Conf. Ser. No. 74, edited by de Cremoux, B., (IOP, London, 1985) p. 241.Google Scholar
10 Chadi, D. J. and Chang, K. J., Phys. Rev. Lett. 61, 873 (1988); Phys. Rev. B 39, 10063(1989).Google Scholar
11 Zhang, S. B. and Chadi, D. J. (to be published).Google Scholar
12 Chadi, D. J. and Chang, K. J., Phys. Rev. Lett. 60, 2187 (1988).Google Scholar
13 Mooney, P. M., Caswell, N. S., and L Wright, S., J. Appl. Phys. 62, 4786 (1987).Google Scholar
14 Calleja, E., Gomez, A., and Muñoz, E., Appl. Phys. Lett. 52, 383 (1988).Google Scholar
15 Mooney, P. M., Wilkening, W., Kaufmann, U., and Kuech, T. F., Phys. Rev. B 39, 5554(1989).Google Scholar
16 Bourgoin, J. C., Feng, S. L., and von Bardeleben, H. J., Phys. Rev. B 7663, (1989).Google Scholar
17 Dmochowski, J. E. and Dobaczewski, L., Semicond. Sci. Technol. 4, 579 (1989).Google Scholar
18 Khachaturyan, K. A., Awschalom, D. D., Rozen, J. R., and Weber, E. R., Phys. Rev. Lett. 63, 1311(1989).Google Scholar
19 Lang, D. V., in Deep Centers in Semiconductors, edited by Pantelides, S. T. (Gordon and Breach, New York, 1986) pp. 489–539.Google Scholar
20 Brunthaler, G., Ploog, K., and Jantsch, W., Phys. Rev. Lett. 63, 2276 (1989).Google Scholar
21 Baba, T., Mitzuta, M., Fujisawa, T., Yoshino, J., and Kukimoto, H., Jpn. J. Appl. Phys. 28, L891 (1989).Google Scholar
22 Chadi, D. J. and Chang, K. J., Phys. Rev. Lett. 60, 2187 (1988); J. Dabrowski and M. Scheffler, ibid. 60, 2183; E. Kaxiras and K. C. Pandey, Phys. Rev. B 40, 8020 (1989).Google Scholar
23 Chadi, D. J. and Chang, K. J., Appl. Phys. Lett. 55, 575 (1989).Google Scholar
24 Zhang, S. B. and Chadi, D. J. (to be published).Google Scholar