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Theory of Critical Layer Thickness of Nonconstant Quantum-Well Width Produced by Interdiffusion and its Optoelectronics Consequence

Published online by Cambridge University Press:  10 February 2011

Michael C. Y. Chan  and
E. Herbert Li
Michael C. Y. Chan
Affiliation:
University of Hong Kong, Department of Electrical & Electronic Engineering, Pokfulam, Hong Kong
E. Herbert Li
Affiliation:
University of Hong Kong, Department of Electrical & Electronic Engineering, Pokfulam, Hong Kong Harvard University, Division of Engineering & Applied Sciences, Pierce Hall 225, 29 Oxford Street, Cambridge MA 02138
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Abstract

In this paper, the concept of critical layer thickness is applied to the interdiffused quantum well (DFQW) structure. For the as-grown InGaAs/LnP lattice matched quantum well, the interdiffusion process will induce in-plane strain into the DFQW forming a lattice mismatched system. The relation between the as-grown well width (Lz) and the diffusion length (Ld) for formation of dislocation is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 425
Copyright
Copyright © Materials Research Society 1998

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