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Theory and Experiment: Defect Stabilization of Diamond Films Through Multiple-Regrowth

Published online by Cambridge University Press:  26 February 2011

Y. Bar-Yam  and
T. D. Moustakas
Y. Bar-Yam
Affiliation:
Materials Research Department, Weizmann Institute of Science, Rehovot, 76100 Israel
T. D. Moustakas
Affiliation:
Department of Electrical, Computer and Systems Engineering, Boston University, 44 Cummington St., Boston Massachussetts 02215
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Abstract

The growth of diamond is now known to occur by chemical vapor deposition at low pressure even though diamond is thermodynamically unstable to graphite under these conditions. A new quasi-equilibrium theory is discussed which describes how the rapid multiple regrowth of layers with a large concentration of vacancies may stabilize nucleation and growth of diamond. Accurate theoretical calculations show that vacancies raise the energy of graphite more than diamond thus reversing the usual energy balance and leading to the growth of diamond films. One prediction of this theory is that electron rich conditions enhance both growth and nucleation. Experiments display the enhanced growth and nucleation. Raman measurements on diamond films also suggest the presence of a large concentration of defects in the resulting films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 201
Copyright
Copyright © Materials Research Society 1990

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