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Theoretical Investigation of Formation of (n-n+)-Junction in Ion-Implanted Crystalline Matrix

Published online by Cambridge University Press:  01 February 2011

R. Peleshchak ,
O. Kuzyk  and
H. Khlyap
R. Peleshchak
Affiliation:
State Pedagogical University, 24 Franko str., 82100 Drohobych, Ukraine
O. Kuzyk
Affiliation:
State Pedagogical University, 24 Franko str., 82100 Drohobych, Ukraine
H. Khlyap
Affiliation:
University of Technology, E.-Schroedinger str. 56, D-67663 Kaiserslautern, Germany, and 8tate Pedagogical University, 24 Franko str., 82100 Drohobych, Ukraine
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Abstract

The paper reports results of theoretical calculations of the redistribution of electrons and electrostatic potential in the implanted crystalline matrix (100)-GaAs+Si(Ar) due to electrondeformation effects. The model requires a self-consistent solution of the set of following equations: 1)the time-independent Schroedinger equation; 2) the equation of mechanical equilibrium: 3) the Poisson equation for determining electrostatic potential distribution; 4) the equation for calculation of the electron concentration, and 5) the equation for the chemical potential calculation in the implanted system. The most important result is: it is shown that in the elastic region of the implanted matrix n-n+-junction is formed. Current-voltage characteristics of the junction are numerically simulated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E9.16
Copyright
Copyright © Materials Research Society 2005

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