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TFT Performance - Material Quality Correlation for a-Si:H Deposited at high Rates

Published online by Cambridge University Press:  15 February 2011

S. Sherman ,
P-Y. Lu ,
R. A. Gottscho  and
S. Wagner
S. Sherman
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
P-Y. Lu
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. A. Gottscho
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

We evaluated the characteristics of a-Si:H/a-SiNx:H thin film transistors (TFTs), and of separately deposited a-Si:H films, as functions of the a-Si:H deposition power in a high-rate, large-area, 40 MHz PE-CVD system. TFT performance and a-Si:H film properties improve with decreasing power density and deposition rate. However, low defect density a-Si:H material was deposited at rates as high as 1500 Å/min. TFTs with gate nitride deposited at 1000 A/min show excellent I-V characteristics when the a-Si:H deposition power is low enough. The TFT electron mobility in the linear regime correlates well with the Urbach energy of the a-Si:H films, suggesting that the quality of the a-Si: H controls the performance of our TFTs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 749
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Curtius, H., Wyrsch, N. and Shah, A. V., Electronics Letters 23, 228 (1987)Google Scholar
2. Westendorp, J.F.M., Meiling, H., Pollock, X.D., Beman, D.W., Laflamme, A.H. Jr., Hautala, J. and Vanderpot, J. in Flat Panel Display Materials, edited by Batey, J., Chiang, A. and Holloway, P.H. (Mater. Res. Soc. Proc. 345, San Fransisco, CA, 1994) pp. 175–183.Google Scholar
3. Meiling, H., Westendorp, J.F.M., Hautala, J., Saleh, Z.M. and Malone, C.T. in Flat Panel Display Materials, edited by Batey, J., Chiang, A. and Holloway, P.H. (Mater. Res. Soc. Proc. 345, San Fransisco, CA, 1994) pp. 65–70 Google Scholar
4. Miyashita, H. and Watabe, Y., IEEE Trans. Electron Dev. 41, 499 (1994)Google Scholar
5. Takechi, K., Uchida, H. and Kaneko, S. in Amorphous Silicon Technology-1992, edited by Thompson, M. J., Hamakawa, Y., LeComber, P.G., Madan, A. and Schiff, E. (Mater. Res. Soc. Proc. 258, San Fransisco, CA, 1992) pp. 955–960 Google Scholar
6. Vanecek, M., Kocka, J., Stuchlik, J., Kozisek, Z., Stiko, O. and Triska, A., Solar Energy Mat. 8, 411 (1983)Google Scholar
7. Tauc, J., Grigorovici, R. and Vancu, A., Phys. Stat. Sol. 15, 627 (1966)Google Scholar