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Texture Evolution During Grain Growth of Aluminum Films

Published online by Cambridge University Press:  25 February 2011

David B. Knorr
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute Troy, New York 12180-3590 Also Materials Engineering Department
Daniel P. Tracy
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute Troy, New York 12180-3590 Also Materials Engineering Department
Toh-Ming Lu
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute Troy, New York 12180-3590 Also Physics Department
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Abstract

Aluminum films 1pm in thickness are deposited by sputtering and by partially ionized beam (PIB) deposition. In the as-deposited condition, the sputtered film has a weak texture while the PIB film has a very strong {111} fiber texture. Annealing at temperature between 250°C and 400°C for 0.5 hr induces grain growth accompanied by texture evolution. These aluminum films are characterized by an {111} texture superimposed on a random grain distribution. When the {111} component dominates as in the PIB condition, little texture evolution accompanies grain growth at successively higher temperatures. When the {111} component is weak, the random component decreases at the expense of a strengthening {111}. Grain growth kinetics are similar for both cases.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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