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Tetragonal Strain in MBE GexSi1-x Films Grown on (100) Si Observed by Ion Channeling and X-Ray Diffraction

Published online by Cambridge University Press:  22 February 2011

A. T. Fiory ,
L. C. Feldman ,
J. C. Bean  and
I. K. Robinson
A. T. Fiory
Affiliation:
At&T Bell Laboratories, Murray Hill, New Jersey 07974
L. C. Feldman
Affiliation:
At&T Bell Laboratories, Murray Hill, New Jersey 07974
J. C. Bean
Affiliation:
At&T Bell Laboratories, Murray Hill, New Jersey 07974
I. K. Robinson
Affiliation:
At&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Structure of GexSi1-x alloy films grown on (100) Si by molecular beam epitaxy is analyzed by MeV He+ ion channeling and X-ray diffraction as functions of Ge concentration, film thickness and growth temperature. Critical thicknesses for pseudomorphic growth are determined for x ≤ 0.5, where coherent tetragonally-strained layers are observed. The average strain decreases approximately as the square-root of thickness when the critical thickness is exceeded. At temperatures near the threshold for islanding growth, surface roughness appears as a precursor to degradation of strained-layer epitaxy. No effect on the amount of the tetragonal strain was found in a study of ion-beam damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 497
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Bean, J. C., Sheng, T. T., Feldman, L. C., Fiory, A. T., and Lynch, R. T., Appl. Phys. Lett., to be published.Google Scholar
2. Fiory, A. T., Bean, J. C., Feldman, L. C., and Robinson, I. K., submitted to Appl. Phys. Lett.Google Scholar
3. Bean, J. C., Feldman, L. C., Fiory, A. T., Nakahara, S., and Robinson, I. K., J. Vac. Sci. Technol., to be published.Google Scholar
4. van der Merwe, J. H. and Ball, C. A. B., in Epitaxial Growth, Part B, edited by Matthews, J. W., (Academic Press, 1975), Chap. 6.Google Scholar
5. Kasper, E. and Herzog, H. J., Appl. Phys. 8, 199 (1975);Google Scholar
Thin Solid Films 44, 357 (1977).Google Scholar