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Tetraalkyldiarsines As Potential Precursors for Electronic Materials: Synthesis and Characterization Of Various Iso-Propyl Arsenic Compounds

Published online by Cambridge University Press:  22 February 2011

Lawrence F. Brough
Affiliation:
Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, Florida 32306-3006
Liu Gang
Affiliation:
Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, Florida 32306-3006
Matthew A. Lipkovich
Affiliation:
Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, Florida 32306-3006
Thomas J. Colacot
Affiliation:
Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, Florida 32306-3006
Virgil L. Goedken
Affiliation:
Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, Florida 32306-3006
William S. Rees Jr.*
Affiliation:
Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, Florida 32306-3006
*
*Address all correspondence to this author at: School of Chemistry and Biochemistry and School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
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Abstract

Tetrakis(iso-propyl)diarsine was synthesized by the reaction of (i-Pr)2AsLi with (i-Pr)2AsI. The lithium salt of the secondary arsine was produced following deprotonation of (i-Pr)2AsH, obtained by reduction of (i-Pr)2AsI, which was prepared by the thermolysis of (i-Pr)3Asl2. The X-ray crystal structure of \(i-Pr)3AsI]\I] has been determined on the product of the reaction of (i-Pr)3As and 12. Compounds of the general form E=As(i-Pr)3 (E = O, S, Se) have been prepared.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

references

1. a) Porter, C. W. and Borgstrom, P., J. Am. Chem. Soc. 41, 2048 (1919). b) Wide Gap IIVI Semiconductors, W. Kuhn, H. P. Wagner, H. Stanzi, K. Wolf, K. Worle, S. Lankes, J. Betz, M. Woraz, D. Lichtenberger, H. Leiderer, W. Gebhard and R. Triboulet, R. L. Aulombard and J. B. Mullin, eds., (Adam Hilger, Bristol, UK), 1991, p. A105. c) V. L. Goedken, L. F. Brough and W. S. Rees, Jr., J. Organomet. Chem. 449, 125 (1993).Google Scholar
2. Elschenbroich, C. and Salzer, A., Organometallics: A Concise Introduction, (VCH, New York), 1992.Google Scholar
3. Doak, G. O. and Freedman, L. D., Organometallic Compounds of Arsenic. Antimony. and Bismuth, (Wiley-Interscience, New York), 1970.Google Scholar
4. a) Goubeau, J. and Baumgdirtner, R., Z. Electrochem. 64, 598 (1960). b) E. F. Wells, Z. Kristallogr. 99, 367 (1938).Google Scholar
5. a) O'Brien, M. H., Doak, G. O., and Long, G. G., Inorg. Chim. Acta 1, 34 (1967). b) M. H. O'Brien, Ph.D. Thesis, North Carolina State University, 1968.Google Scholar
6. a) Bhaskar, K. R., Bhat, S. N., Singh, S., and Rao, C. N. R., J. Inorg. Nucl. Chem. 28, 1915 (1966). b) S. N. Bhat and C. N. R. Rao, J. Amer. Chem. Soc. 88, 3216 (1966).Google Scholar