Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-27T02:16:03.044Z Has data issue: false hasContentIssue false

Ternary Copper-Based Diamond-Like Semiconductors for Thermoelectric Applications

Published online by Cambridge University Press:  31 January 2011

Donald T Morelli
Affiliation:
[email protected], Michigan State University, Department of Chemical Engineering & Materials Science, East Lansing, Michigan, United States
Eric J. Skoug
Affiliation:
[email protected], Michigan State University, Chemical Engineering & Materials Science, East Lansing, Michigan, United States
Get access

Abstract

Thermoelectric materials can provide sources of clean energy and increase the efficiency of existing processes. Solar energy, waste heat recovery, and climate control are examples of applications that could benefit from the direct conversion between thermal and electrical energy provided by a thermoelectric device. The widespread use of thermoelectric devices has been prevented by their lack of efficiency, and thus the search for high-efficiency thermoelectric materials is ongoing. Here we describe our initial efforts studying copper-containing ternary compounds for use as high-efficiency thermoelectric materials that could provide low-cost alternatives to their silver-containing counterparts. The compounds of interest are semiconductors that crystallize in structures that are variants of binary zincblende structure compounds. Two examples are the compounds Cu2SnSe3 and Cu3SbSe4, for which we present here preliminary thermoelectric characterization data.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 and, C.H.L. Goodman Douglas, R.W., Physica (Amsterdam) 20, 1107 (1954)Google Scholar
2 Hahn, H., Frank, G., Klinger, W., Meyer, A.D., Storger, G., Z. Anorg. Allg. Chem. 271, 153 (1954)Google Scholar
3 Zhuze, V.P., Sergeeva, V.M., Shtrum, E.L., Soviet Physics Technical Physics 3, 10 (1958)Google Scholar
4 Averkieva, G.K., Vaipolin, A.A., Goryunova, N.A., Soviet Research in New Semiconductor Materials, (1965)Google Scholar
5 Morelli, D.T., Jovovic, V., Heremans, J.P., Physical Review Letters 101, 035901 (2008)Google Scholar
6 Morelli, D.T. and Slack, G.A., in High Thermal Conductivity Materials, ed. Shinde, S.L and Goela, J.S. (Springer, New York, 2006), p. 37.Google Scholar
7 Petrov, A.V., Shtrum, E.L., Soviet Physics - Solid State 4, 6 (1962)Google Scholar