Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-09T12:58:53.461Z Has data issue: false hasContentIssue false
  • English
  • Français

Terahertz Detection Related to Plasma Excitations in Nanometer Gate Length Field Effect Transistor.

Published online by Cambridge University Press:  01 February 2011

Wojciech Knap ,
A. El Fatimy ,
R. Tauk ,
S. Boubanga Tombet  and
F. Teppe
Wojciech Knap
Affiliation:
[email protected], CNRS, GES, UMR 5650 CNRS-Université Montpellier II, Bt 21, CC074, Place Eugne Bataillon, 34095 Montpellier, Montpellier, 34095, France
A. El Fatimy
Affiliation:
[email protected], GES UMR 5650, CNRS & Montpellier University, Montpellier, 34095, France
R. Tauk
Affiliation:
[email protected], GES UMR 5650, CNRS & Montpellier University, Montpellier, 34095, France
S. Boubanga Tombet
Affiliation:
[email protected], GES UMR 5650, CNRS & Montpellier University, Montpellier, 34095, France
F. Teppe
Affiliation:
[email protected], GES UMR 5650, CNRS & Montpellier University, Montpellier, 34095, France
Get access

Abstract

The channel of nanometre field effect transistor can act as a resonant cavity for plasma waves. The frequency of these plasma waves is in the Terahertz range and can be tuned by the gate length and the gate bias. During the last few years Terahertz detection and emission related to plasma wave instabilities in nanometre size field effect transistors was demonstrated experimentally. In this work we review the recent results on sub-THz and THz detection by 50-300nm gate length III-V HEMTs and Si MOSFETs. We present experimental results on the resonant and nonresonant (overdamped) plasma wave detection and discuss possible applications of nanometre field effect transistors as new detectors of THz radiations.

Keywords

nanostructureIII-Vphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 958: Symposium L – Group IV Semiconductor Nanostructures—2006 , 2006 , 0958-L06-09
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Dyakonov, M. and Shur, M. S., Phys. Rev. Lett. 71, 2465 (1993)Google Scholar
2 Shur, M. S., IEEE Electron Device Letters 23, 511 (2002).Google Scholar
3 Dyakonov, M. and Shur, M. S., IEEE Trans. Electron Devices 43, 380 (1996).Google Scholar
4 Knap, W., Deng, Y., Rumyantsev, S., Lü, J.-Q., Shur, M. S., Saylor, C. A., Brunel, L. C., Appl. Phys. Lett. 80, 3433 (2002).Google Scholar
5 Lee, M., Wanke, M. C., and Reno, J. L., Appl. Phys. Lett. 86, 033501 (2004)Google Scholar
6 Peralta, X. G., Allen, S. J., Wanke, M. C., Harff, N. E., Simmons, J. A., Lilly, M. P., Reno, J. L., Burke, P. J., and Eisenstein, J. P., Appl. Phys. Lett. 81, 1627 (2002)Google Scholar
7 Knap, W., Deng, Y., Rumyantsev, S. and Shur, M. S., Appl.Phys.Lett. V., 81, N 24, pp.4637–4638, 2002 Google Scholar
8 Otsuji, T., Hanabe, M., and Ogawara, O., Appl. Phys. Lett. 85, 2119 (2004)Google Scholar
9 Knap, W., Lusakowski, J., Parenty, T., Bollaert, S., Cappy, A., Popov, V.V., Shur, M.S., Appl. Phys. Lett. 84, 2331 (2004)Google Scholar
10 Knap, W., Lusakowski, J., Parenty, T., Bollaert, S., Cappy, A. and Shur, M..S., Appl.Phys. Lett. V., 84, N 13, pp.2331–2333, 2004 Google Scholar
11 Knap, W., Teppe, F., Meziani, Y., Dyakonova, N., Lusakowski, J., Boeuf, F., Skotnicki, T., Maude, D., Rumyantsev, S., Shur, M. S., Appl. Phys. Lett. 85,.675 (2004)Google Scholar
12 Fatimy, A. El, Teppe, F., Dyakonova, N., Knap, W, Seluita, D., Valusis, G., Shchepetov, A., Roelens, Y., Bollaert, S., Cappy, A., Rumyantsev, S.. Appl. Phys. Lett. 89, 131926 (2006)Google Scholar
13 Teppe, F., Knap, W., Veksler, D., Shur, M., Dmitriev, A. P., Kachorovskii, V. Y., and Rumyantsev, S., Appl. Phys. Lett. 87, 052107 (2005)Google Scholar
14 Veksler, D., Teppe, F., Dmitriev, A. P., Kachorovskii, V. Y., Knap, W., and Shur, M., Phys. Rev. B 73, 125328 (2006)Google Scholar
15 Ryzhii, V., Satou, A., Knap, W., and Shur, M. S., J. Appl. Phys, 99, 084507 (2006)Google Scholar
16 Fatimy, A. El, Tombet, S. Boubanga, Teppe, F., Knap, W., Veksler, D.B., Rumyantsev, S., Shur, M.S., Pala, N., Gaska, R., Fareed, Q., Hu, X., Seliuta, D., Valusis, G., Gaquiere, C., Theron, D., and Cappy, A. Electron. Lett. 42, 1342 (2006).Google Scholar
17 Tauk, R., Teppe, F., Boubanga, S., Coquillat, D., Knap, W., Meziani, Y.M., Gallon, C., Boeuf, F., Skotnicki, T., Fenouillet-Beranger, C., Maude, D., Rumyantsevi, S., Shur, M.S., Appl. Phys. Lett. 89, 1 (2006).Google Scholar