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A Tentative Identification of Certain Deep Levels in GaAs and Related Compounds

Published online by Cambridge University Press:  28 February 2011

Zou Yuanxi ,
Chou Yuanhsi ,
Mo Peigen ,
Yang Qianzhi ,
Min Huifang  and
Zhang Guicheng
Zou Yuanxi
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica
Chou Yuanhsi
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica
Mo Peigen
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica
Yang Qianzhi
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica
Min Huifang
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica
Zhang Guicheng
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica
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Abstract

Some recent data on minority carrier diffusion length MCDL in GaAs and certain optoelectric parameters of LEDs obtained by the authors as well as reported in the literature have been analysed to shed light on the probable configuration of certain deep levels in GaAs and related compounds. The practical implications of the results obtained are discussed from the view point of the mechanism of slow degradation of the related optoelectronic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 385
Copyright
Copyright © Materials Research Society 1985

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