Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-19T03:05:31.724Z Has data issue: false hasContentIssue false
  • English
  • Français

The Ten-Fold Surface of The Decagonal Al72Ni11Co17 Quasicrystal Studied by Leed, Spa-Leed, Aes and Stm.

Published online by Cambridge University Press:  17 March 2011

Erik J. Cox ,
Julian Ledieu ,
RÓn'n Mcgrath ,
Renee D. Diehl ,
Cynthia J. Jenks  and
Ian Fisher
Erik J. Cox
Affiliation:
Surface Science Research Centre, The University of Liverpool, Liverpool, L69 3BX, UK
Julian Ledieu
Affiliation:
Surface Science Research Centre, The University of Liverpool, Liverpool, L69 3BX, UK
RÓn'n Mcgrath
Affiliation:
Surface Science Research Centre, The University of Liverpool, Liverpool, L69 3BX, UK
Renee D. Diehl
Affiliation:
Dept. of Physics, Pennsylvania State University, University Park, PA 16802, USA
Cynthia J. Jenks
Affiliation:
Ames Laboratory, Iowa State University, Ames, IA 50011, USA
Ian Fisher
Affiliation:
Ames Laboratory, Iowa State University, Ames, IA 50011, USA
Get access

Abstract

The ten-fold surface of the decagonal Al72Ni11Co17 (d-Al-Ni-Co) quasicrystal has been investigated using low energy electron diffraction (LEED), spot profile analysis LEED (SPA- LEED), Auger electron spectroscopy (AES) and scanning tunnelling microscopy (STM). This was done as a function of both annealing temperature and annealing time. The long-range order of the surface, as indicated by LEED, increases both as a function of annealing time and temperature. STM shows the surface to be rough and cluster-like at low annealing temperatures (≤725 K), whilst annealing to temperatures in excess of 725 K results in the formation of terraces. These terraces are small (≤ 100 Å width) at lower annealing temperatures and increase in size (100 Å ≤ x ≤ 500 Å) as the annealing temperature is increased (≥ 850 K). They are characterised by the presence of three-fold protrusions which align preferentially. STM images show single height steps as expected due to the periodicity of d-Al-Ni-Co in the z direction. To date it has not been possible to obtain atomic resolution, although this work is continuing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 643: Symposium K – Quasicrystals-Preparation, Properties, and Applications , 2000 , K11.3
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Gibbons, P.C. and Kelton, K.F., in Physical Properties of Quasicrystals, edited by Stadnik, Z.M. (Springer, New York, 1999), pp. 414–426.Google Scholar
[2] Ledieu, J., Munz, A.W., Parker, T.M., McGrath, R.. Diehl, R.D., Delaney, D.W. and Lograsso, T.A., Surface Science, 433/435, 665 (1999).Google Scholar
[3] Ledieu, J., Munz, A.W., Parker, T.M., McGrath, R.. Diehl, R.D., Delaney, D.W. and Lograsso, T.A., Proc. Mat. Res. Soc. 553, 237 (1999).Google Scholar
[4] Steinhardt, P.J., Jeong, H.-C., Saitoh, K., Tanaka, M., Abe, E. and Tsai, A.P., Nature, 396,55 (1998).Google Scholar
[5] Gummelt, P., Geometriae Dedicata, 62, 433 (1996).Google Scholar
[6] Steinhardt, P.J., Jeong, H.-C., Saitoh, K., Tanaka, M., Abe, E. and Tsai, A.P., Phys. Rev. Lett. 20, 4609 (2000)Google Scholar
[7] Yan, Y., Pennycook, S.J. and Tsai, A.P., Phys. Rev. Lett. 81, 5145 (1998).Google Scholar
[8] Shimoda, M., Guo, J.Q., Sato, T.J. and Tsai, A.P., Surface Science, 454–456, 11 (2000).Google Scholar
[9] Gierer, M., Mikkelsen, A., Gräber, M., Gille, P. and Moritz, W., Surface Science, 463. L654 (2000).Google Scholar
[10] Zurkirch, M., Bolliger, B. and Erdubak, M., Phys. Rev. B, 58, 14113 (1998).Google Scholar
[11] Zurkirch, M., Erdubak, M. and Kortan, A.R., in Proceedings of the Sixth International Conference on Quasicrystals, edited by Fujiwara, T. and Takeuchi, S. (World Scientific, Singapore, 1998), pp. 67–70.Google Scholar
[12] Bolliger, B., Erdubak, M. and Hochstrasser, M., Phys. Rev. B, 54, 15598 (1996).Google Scholar
[13] Boudard, M. and Boissieu, M. de, in Physical Properties of Quasicrystals, edited by Stadnik, Z.M. (Springer, New York, 1999), pp. 119–124.Google Scholar
[14] Edagawa, K., Kishida, M., Kamimura, Y., Tamura, R., Takeuchi, S., Yokoyama, Y., Guo, J.Q. and Tsai, A.P., in preparation.Google Scholar