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Temporal response of the optically generated electric field in InAs/GaAs coupled quantum dots

Published online by Cambridge University Press:  31 January 2011

Kushal C. Wijesundara
Affiliation:
[email protected], Ohio University, Department of Physics and Astronomy, 251C Clippinger Research Laboratories, Ohio University, Athens, Ohio, 45701, United States, 740-593-1718, 740-593-0433
Mauricio Garrido
Affiliation:
[email protected], Ohio University, Department of Physics and Astronomy, Athens, Ohio, United States
Swati Ramanathan
Affiliation:
[email protected], Ohio University, Department of Physics and Astronomy, 251C Clippinger Research Laboratories, Ohio University, Athens, Ohio, 45701, United States, 740-593-1718, 740-593-0433
Eric A. Stinaff
Affiliation:
[email protected], Ohio University, Department of Physics and Astronomy, Athens, Ohio, United States
Allan S. Bracker
Affiliation:
[email protected], Naval Research Laboratory, Washington, District of Columbia, United States
Daniel Gammon
Affiliation:
[email protected], Naval Research Laboratory, Washington, District of Columbia, United States
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Abstract

Coupled quantum dots (CQDs) can provide a sensitive probe of the electric field within a device. With non-resonant excitation above the wetting layer (WL) energy, optical generation of an electric field within the CQD structure was observed. By alternating this non-resonant excitation the temporal response of the optically generated electric field was measured. Decay of this field was measured to be on the order of 110-140 μsec whereas the onset of the optically generated electric field was observed to be less than the temporal resolution of our experiment (7.5 μsec). This may provide a means for fast, non-contact, electric field modulation techniques.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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