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Temperature Dependent Recombination Lifetime in Silicon: Influence of Trap Level

Published online by Cambridge University Press:  26 February 2011

Andrzej Buczkowski ,
Zbigniew J. Radzimski ,
Yoshi Kirino ,
Fumio Shimura  and
George A. Rozgonyi
Andrzej Buczkowski
Affiliation:
North Carolina State University, Dept. of Materials Science and Engineering, Raleigh, NC 2 7695–7916
Zbigniew J. Radzimski
Affiliation:
North Carolina State University, Dept. of Materials Science and Engineering, Raleigh, NC 2 7695–7916
Yoshi Kirino
Affiliation:
North Carolina State University, Dept. of Materials Science and Engineering, Raleigh, NC 2 7695–7916
Fumio Shimura
Affiliation:
North Carolina State University, Dept. of Materials Science and Engineering, Raleigh, NC 2 7695–7916
George A. Rozgonyi
Affiliation:
North Carolina State University, Dept. of Materials Science and Engineering, Raleigh, NC 2 7695–7916
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Abstract

This paper discusses the temperature dependence of recombination lifetime in a variety of silicon materials using energy level as a parameter. A theoretical approach based on the Shockley-Read-Hall theory for energy level calculations has been used. Various types of defects created by introducing impurities, dislocations and grain boundaries into silicon waferswere studied. Results are presented for Czochralski grown Si wafers intentionally contaminated with gold and chromium, EFG ribbon with varying concentration of oxygen, web ribbons with extended defects and contaminants, large grain polycrystalline material, and Si/Si-Ge/Si heterostructures with varying misfit and threading dislocation density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 567
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Lang, D.V., J. Appl. Phys., 45, 3023 (1974)CrossRefGoogle Scholar
2. Kirino, Y., Buczkowski, A., Radzimski, Z., Rozgonyi, G. and Shimura, F., Appl. Phys. Lett., 57, 1 (1990)Google Scholar
3. Shockley, W. and Read, W. T., Phys. Rev., 87, 835 (1952)Google Scholar
4. Rozgonyi, G., Salih, A., Radzimski, Z., Kola, R., Honeycutt, J., Bean, K. and Lindberg, K., J.Crystal Growth, 85, 300 (1987)Google Scholar
5. Schroder, D. K., Semiconductor Material and Device Characterization, J. Wiley & Sons, Inc., New York 1990, 431 Google Scholar
6. Luke, K. L. and Cheng, L. J., J. Appl. Phys., 61, 2282 (1987)Google Scholar