Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-06T12:59:39.842Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature Dependent Morphology Transition of GaN Films

Published online by Cambridge University Press:  10 February 2011

A. R. A. Zauner ,
F. K. De Theue ,
P. R. Hageman ,
W. J. P. Van ,
J. J. Schermer  and
P. K. Larsen
A. R. A. Zauner
Affiliation:
Research Institute for Materials, University of Nijmegen, Toemooiveld, 6525 ED Nijmegen, The Netherlands
F. K. De Theue
Affiliation:
Research Institute for Materials, University of Nijmegen, Toemooiveld, 6525 ED Nijmegen, The Netherlands
P. R. Hageman
Affiliation:
Research Institute for Materials, University of Nijmegen, Toemooiveld, 6525 ED Nijmegen, The Netherlands
J. J. Schermer
Affiliation:
Research Institute for Materials, University of Nijmegen, Toemooiveld, 6525 ED Nijmegen, The Netherlands
P. K. Larsen
Affiliation:
Research Institute for Materials, University of Nijmegen, Toemooiveld, 6525 ED Nijmegen, The Netherlands
Get access

Abstract

The temperature dependence of the surface morphology of GaN epilayers was studied with AFM. The layers were grown by low pressure MOCVD on (0001) sapphire substrates in the temperature range of 980°C-1085°C. In this range the (0001) and {1101} faces completely determine the morphology of 1.5 μm thick Ga-faced GaN films. For specimens grown at 20 mbar and temperatures below 1035°C the {1101} faces dominate the surface, which results in matt-white layers. At higher growth temperatures the morphology is completely determined by (0001) faces, which lead to smooth and transparent samples. For growth at 50 mbar, this transition takes place between 1000°C and 1015°C. It is shown that the morphology of the films can be described using a parameter αGaN, which is proportional to the relative growth rates of the (0001) and the {1101} faces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 345
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] III-V Nitrides, edited by F.A., Ponce, T.D., Moustakas, I., Akasaki, and B.A., Monemar (Mater. Res. Soc. Proc. 449, Pittsburgh, Pennsylvania, 1996)Google Scholar
[2] Amano, H., Sawaki, N., Akasaki, I., Toyoda, Y., Appl. Phys. Lett. 48, 353(1986)10.1063/1.96549Google Scholar
[3] Weyher, J.L., Mfiller, S., Grzegory, I., Porowski, S., J. Crystal Growth 182, 17(1997)10.1016/S0022-0248(97)00320-5Google Scholar
[4] Pearton, F.A., in Optoelectronic Properties of Semiconductores and Superlattices, volume 2:, GaN and Related Materials, edited by S.J., Pearton (Gordon and Breach Science Publishers, Amsterdam, 1997)Google Scholar
[5] Bennema, P., in Handbook of Crystal Growth, Volume 1, edited by D.T.J., Hurle (North-Holland, Amsterdam, 1993) 477 Google Scholar
[6] Grimbergen, R.F.P., Meekes, H., Bennema, P., Strom, C.S., Vogels, L.J.P., Acta Crystallogr. A 54, 491(1998)10.1107/S0108767397019806Google Scholar
[7] Akasaka, T., Kobayashi, Y., Ando, S., Kaboyashi, N., Appl. Phys. Lett. 71, 2196(1997)10.1063/1.119379Google Scholar
[8] Kozawa, T., Suzuki, M., Taga, Y., Gotoh, Y., Ishikawa, J., J. Vac. Sci. Technol.. B16 (1998) 833 10.1116/1.590220Google Scholar
[9] Wu, X.H., Fini, P., Keller, S., Tarsa, E.J., Heying, B., Mishra, U.K., DenBaars, S.P., Speck, S.J., Jpn. J. Appl. Phys. 35, L1648 (1996)10.1143/JJAP.35.L1648Google Scholar
[10] Vennéguès, P., Beaumont, B., Haffouz, S., Vaille, M., Gibart, P., J. Crystal Growth 187, 167(1998)10.1016/S0022-0248(97)00875-0Google Scholar
[11] Wild, C., Koidl, P., Miiller-Sebert, W., Kohl, R., Herres, N., Locher, R., Samlenski, R., Brenn, R., Diamond Relat. Mater. 2, 158(1993)10.1016/0925-9635(93)90047-6Google Scholar
[12] Clausing, R.E., Heatherly, L., Horton, L.L., Specht, E.D., Begun, G.M., Wang, Z.L., Diamond Relat. Mater. 1, 411(1992)10.1016/0925-9635(92)90139-FGoogle Scholar
[13] Northrup, J.E., Felice, R. Di, Phys. Rev. B56 (1997) R4325 10.1103/PhysRevB.56.R4325Google Scholar
[14] van Enckevort, W.J.P., in Facets of Fourty Years of Crystal Growth, edited by W.J.P., van Enckevort, H.L.M., Meekes, and J.W.M., van Kessel (University of Nijmegen, 1997, internal publication), 62 Google Scholar
[15] Frank, F.C., Acta Crystallogr. 4 (1951) 327.10.1107/S0365110X51001690Google Scholar
[16] Coulomb, P., Friedel, J., in Dislocations and Mechanical Properties of Crystals, edited by J.C., Fisher, W.G., Johnston, R., Thomson and T., Vreeland (Wiley, New York, 1957) 555.Google Scholar