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Temperature Dependent Morphology Transition of GaN Films

Published online by Cambridge University Press:  10 February 2011

A. R. A. Zauner ,
F. K. De Theue ,
P. R. Hageman ,
W. J. P. Van ,
J. J. Schermer  and
P. K. Larsen
A. R. A. Zauner
Affiliation:
Research Institute for Materials, University of Nijmegen, Toemooiveld, 6525 ED Nijmegen, The Netherlands
F. K. De Theue
Affiliation:
Research Institute for Materials, University of Nijmegen, Toemooiveld, 6525 ED Nijmegen, The Netherlands
P. R. Hageman
Affiliation:
Research Institute for Materials, University of Nijmegen, Toemooiveld, 6525 ED Nijmegen, The Netherlands
J. J. Schermer
Affiliation:
Research Institute for Materials, University of Nijmegen, Toemooiveld, 6525 ED Nijmegen, The Netherlands
P. K. Larsen
Affiliation:
Research Institute for Materials, University of Nijmegen, Toemooiveld, 6525 ED Nijmegen, The Netherlands
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Abstract

The temperature dependence of the surface morphology of GaN epilayers was studied with AFM. The layers were grown by low pressure MOCVD on (0001) sapphire substrates in the temperature range of 980°C-1085°C. In this range the (0001) and {1101} faces completely determine the morphology of 1.5 μm thick Ga-faced GaN films. For specimens grown at 20 mbar and temperatures below 1035°C the {1101} faces dominate the surface, which results in matt-white layers. At higher growth temperatures the morphology is completely determined by (0001) faces, which lead to smooth and transparent samples. For growth at 50 mbar, this transition takes place between 1000°C and 1015°C. It is shown that the morphology of the films can be described using a parameter αGaN, which is proportional to the relative growth rates of the (0001) and the {1101} faces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 345
Copyright
Copyright © Materials Research Society 1999

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References

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