Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-29T08:10:08.744Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature Dependence of Bound Exciton Emissions in GaN

Published online by Cambridge University Press:  15 February 2011

D. G. Chtchekine ,
G. D. Gilliland ,
Z. C. Feng ,
S. J. Chua ,
D. J. Wolford ,
S. E. Ralph ,
M. J. Schurman  and
I. Ferguson
D. G. Chtchekine
Affiliation:
Physics Department, Emory University, Atlanta, GA 30322
G. D. Gilliland
Affiliation:
Physics Department, Emory University, Atlanta, GA 30322
Z. C. Feng
Affiliation:
Institute of Material Research and Engineering, Singapore, 119260
S. J. Chua
Affiliation:
Institute of Material Research and Engineering, Singapore, 119260
D. J. Wolford
Affiliation:
Physics Department and Microelectronics Research Center, Iowa State University, Ames, IA 50011
S. E. Ralph
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332
M. J. Schurman
Affiliation:
Emcore Corporation, Somerset, NJ 08873
I. Ferguson
Affiliation:
Emcore Corporation, Somerset, NJ 08873
Get access

Abstract

The dissociation channels of two prominent bound exciton complexes in wurtzite GaN thin films are determined via an extensive temperature dependent photoluminescence study. The shallow donor bound exciton dissociation at low temperatures (T ≤ 50 K) is found to be dominated by the release of a free exciton with thermal activation energy consistent with the exciton localization energy. At higher temperatures a second dissociation channel with activation energy EA = 28 ± 2 meV is observed. The dissociation of a bound exciton complex with exciton localization energy Exloc = 11.7 meV is also dominated by the release of a free exciton. In contrast to previous studies evidence is presented against the hypothesis of this emission being due to the exciton bound to an ionized donor. We find that it originates most likely from an exciton bound to a neutral acceptor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.47
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Skromme, B. J., Zhao, H., Goldenberg, B., Kong, H. S., Leonard, M. T., Bulman, G. E., Abernathy, C. R., and Pearton, S. J., in III-V Nitrides, edited by Ponce, F. A., Moustakas, T. D., Akasaki, I., and Monemar, B. A. (Mater. Res. Soc. Syrup. Proc. 449, Pittsburgh, 1997) p. 713.Google Scholar
2 Volm, D., Oettinger, K., Streibl, T., Kovalev, D., Ben-Chorin, M., Diener, J., Meyer, B. K., Majewski, J., Eckey, L., Hoffmann, A., Amano, H., Akasaki, I., Hiramatsu, K., and Detchprohm, T., Phys. Rev B 53, 16543 (1996).Google Scholar
3 Kawakami, Y., Peng, Z. G., Narukawa, Y., Fujita, S., Fujita, S., and Nakamura, S., Appl. Phys. Lett. 69, 1414 (1996).Google Scholar
4 Pakula, K., Wysmolek, A., Korona, K. P., Baranowski, J. M., Stepniewski, R., Grzegory, I., Bockowski, M., Jun, J., Krukowski, S., Wroblewski, M., and Porowski, S., Solid State Commun. 97, 919 (1996).Google Scholar
5 Fischer, S., Volm, D., Kovalev, D., Averboukh, B., Graber, A., Alt, H. C., and Meyer, B. K., Mater. Sci. Eng. B 43, 192 (1997).Google Scholar
6 Reynolds, D. C., Look, D. C., Jogai, B., Phanse, V. M., and Vaudo, R. P., Solid State Commun. 103, 533 (1997).Google Scholar
7 Santic, B., Merz, C., Kaufmann, U., Niebuhr, R., Obloh, H., and Bachem, K., Appl. Phys. Lett. 71, 1837 (1997).Google Scholar
8 Meyer, B. K., in III-V Nitrides, edited by Ponce, F. A., Moustakas, T. D., Akasaki, I., and Monemar, B. A. (Mater. Res. Soc. Symp. Proc. 449, Pittsburgh, 1997) p. 497.Google Scholar
9 Chen, G. D., Smith, M., Lin, J. Y., Jiang, H. X., Khan, M. A., and Sun, C. J., Appl. Phys. Lett. 67, 1653 (1995).Google Scholar
10 Gilliland, G. D., Mater. Sci. Eng. R 18, 141 (1997).Google Scholar
11 Kozawa, T., Kachi, T., Kano, H., Taga, Y., Hashimoto, M., Koide, N., and Manabe, K., J. Appl. Phys. 75, 1098 (1994).Google Scholar
12 Dean, P. J., Phys. Rev. 157, 655 (1967).Google Scholar
13 Wang, Y. J., Kaplan, R., Ng, H. K., Doverspike, K., Gaskill, D. K., Ikedo, T., Akasaki, I., and Amano, H., J. Appl. Phys. 79, 8007 (1996).Google Scholar
14 Skettrup, T., Suffczynski, M., and Gorzkowski, W., Phys. Rev. B 4, 512 (1971).Google Scholar
15 Sturge, M. D., Cohen, E., and Rodgers, K. F., Phys. Rev. B 15, 3169 (1977).Google Scholar
16 Alt, H. C., Meyer, B. K., Volm, D., Graber, A., Drechsler, M., Hofmann, D. M., Detchprohm, T., Amano, A., and Akasaki, I., Mater. Sci. Forum 196, 17 (1995).Google Scholar
17 Merz, C., Kunzer, M., Kaufmann, U., Akasaki, I., and Amano, H., Semicond. Sci. Technol. 11, 712 (1996).Google Scholar