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Temperature Dependence of Biaxial Modulus and Thermal Expansion Coefficient of Thin Films Using Wafer Curvature Method

Published online by Cambridge University Press:  01 February 2011

M. Capanu
Affiliation:
Technology R&D, Gennum Corporation, P.O. Box 489, Station A, Burlington, Ontario, L7R 3Y3, Canada.
A. Cervin-Lawry
Affiliation:
Technology R&D, Gennum Corporation, P.O. Box 489, Station A, Burlington, Ontario, L7R 3Y3, Canada.
A. Patel
Affiliation:
Technology R&D, Gennum Corporation, P.O. Box 489, Station A, Burlington, Ontario, L7R 3Y3, Canada.
I. Koutsaroff
Affiliation:
Technology R&D, Gennum Corporation, P.O. Box 489, Station A, Burlington, Ontario, L7R 3Y3, Canada.
P. Woo
Affiliation:
Technology R&D, Gennum Corporation, P.O. Box 489, Station A, Burlington, Ontario, L7R 3Y3, Canada.
Lynda Wu
Affiliation:
Technology R&D, Gennum Corporation, P.O. Box 489, Station A, Burlington, Ontario, L7R 3Y3, Canada.
J. Oh
Affiliation:
Technology R&D, Gennum Corporation, P.O. Box 489, Station A, Burlington, Ontario, L7R 3Y3, Canada.
J. Obeng
Affiliation:
Technology R&D, Gennum Corporation, P.O. Box 489, Station A, Burlington, Ontario, L7R 3Y3, Canada.
B. McClelland
Affiliation:
Technology R&D, Gennum Corporation, P.O. Box 489, Station A, Burlington, Ontario, L7R 3Y3, Canada.
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Abstract

The present work uses wafer curvature (disk) method to measure the temperature variation of the biaxial modulus and the thermal expansion coefficient TEC from 25°C to 205°C. The following thin films were measured: PolySi, low stress LPCVD SixNy and (Ba0.7, Sr0.3)TiO3 (BST). To improve the precision, perfect circular thin wafers were used: 4 inches circular 280μm thick <111>Si and 450μm thick Fused Silica. The measurements were performed using a commercial Tencor FLX2320 Stress Measurement System. The film thickness was measured with Tencor TF1 thin film optical system.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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