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Temperature Dependence and Current Transport Mechanisms in AlxGa1−xN Schottky Rectifiers

Published online by Cambridge University Press:  15 March 2011

A.P. Zhang ,
X.A. Cao ,
G. Dang ,
F. Ren ,
J. Han ,
J.-I. Chyi ,
C.-M. Lee ,
C.-C. Chuo  and
T.E. Nee
A.P. Zhang
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
X.A. Cao
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87195
G. Dang
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
J. Han
Affiliation:
Department of materials Science and Engineering, University of Florida, Gainesville, FL 32611
J.-I. Chyi
Affiliation:
Department of Electrical Engineering, National Central University, Taiwan
C.-M. Lee
Affiliation:
Department of Electrical Engineering, National Central University, Taiwan
C.-C. Chuo
Affiliation:
Department of Electrical Engineering, National Central University, Taiwan
T.E. Nee
Affiliation:
Department of Electrical Engineering, National Central University, Taiwan
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Abstract

GaN and Al0.25Ga0.75N lateral Schottky rectifiers were fabricated either with (GaN) or without (AlGaN) edge termination. The reverse breakdown voltage VB (3.1 kV for GaN with both p+ guard rings and metal overlap edge terminations; 4.3 kV for Al0.25Ga0.75N without edge termination) displayed a negative temperature coefficient of −6.0 ± 0.4 V·K−1 for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100A·Cm−2 was ∼5 V for GaN and ∼7.5 V for AlGaN. The on-state resistances, RON, were 0.13 Δcm2 for GaN and 2.3 Δcm2 for AlGaN, producing figures-or-merit (VRB)2/RON of 73.9 and 8.2 MW.Cm−2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T2.7.1
Copyright
Copyright © Materials Research Society 2000

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