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TEM Study of the Growth Modes in ALMBE GaAs Layers on Si

Published online by Cambridge University Press:  25 February 2011

A. Vilà ,
A. Comet ,
J. R. Morante ,
L. González ,
Y. González ,
F. Briones  and
P. Ruterana
A. Vilà
Affiliation:
LCMM. Dept. Física Aplicada i Electròncia, Univ. de Barcelona, Diagonal 645–647, 08028-Barcelona., Spain.
A. Comet
Affiliation:
LCMM. Dept. Física Aplicada i Electròncia, Univ. de Barcelona, Diagonal 645–647, 08028-Barcelona., Spain.
J. R. Morante
Affiliation:
LCMM. Dept. Física Aplicada i Electròncia, Univ. de Barcelona, Diagonal 645–647, 08028-Barcelona., Spain.
L. González
Affiliation:
Centro Nacional de Microelectrónica, CSIC. Serrano 144, 28006-Madrid., Spain.
Y. González
Affiliation:
Centro Nacional de Microelectrónica, CSIC. Serrano 144, 28006-Madrid., Spain.
F. Briones
Affiliation:
Centro Nacional de Microelectrónica, CSIC. Serrano 144, 28006-Madrid., Spain.
P. Ruterana
Affiliation:
I2 M. Ecole Polytéchnique Fédérale de Lausanne. 1015-Lausanne., Switzerland.
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Abstract

In this work, we have compared, by using Transmission Electron Microscopy (TEM) techniques, the initial stages of epitaxial growth of GaAs on Si (100) by conventional MBE and ALMBE, trying to find the conditions necessary to achieve 2D growth at the earliest stage of deposition. Our results show that flat layers with a good surface coverage can be obtained by reducing the GaAs ALMBE deposition temperature down to 200°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 339
Copyright
Copyright © Materials Research Society 1993

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References

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