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Published online by Cambridge University Press: 25 February 2011
In this work, we have compared, by using Transmission Electron Microscopy (TEM) techniques, the initial stages of epitaxial growth of GaAs on Si (100) by conventional MBE and ALMBE, trying to find the conditions necessary to achieve 2D growth at the earliest stage of deposition. Our results show that flat layers with a good surface coverage can be obtained by reducing the GaAs ALMBE deposition temperature down to 200°C.