Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-25T17:41:29.239Z Has data issue: false hasContentIssue false

TEM Study of Flux Pinning Defects in YBa2Cu3O7-δProduced by 580 MeV Sn Ion Irradiation

Published online by Cambridge University Press:  28 February 2011

R. Wheeler
Affiliation:
Argonne National Laboratory, Argonne, IL 60439
M. A. Kirk
Affiliation:
Argonne National Laboratory, Argonne, IL 60439
R. Brown
Affiliation:
Argonne National Laboratory, Argonne, IL 60439
A. D. Marwick
Affiliation:
Argonne National Laboratory, Argonne, IL 60439 IBM TJ. Watson Research Center, Yorktown Heights, NY 10598
L. Civale
Affiliation:
IBM TJ. Watson Research Center, Yorktown Heights, NY 10598
F. H. Holtzberg
Affiliation:
IBM TJ. Watson Research Center, Yorktown Heights, NY 10598
Get access

Abstract

Recent studies of high Tc superconductors irradiated with high energy heavy ions have indicated that a defect structure is produced which is extremely effective in pinning magnetic flux lines. In attempting to develop models to account for these observations, it is imperative to have a complete characterization of the defects responsible for the property enhancements. Hence, the defect microstructure produced in single crystal YBCO by 580 MeV Sn30+ irradiation, recently demonstrated to provide highly effective flux pinning at high fields and temperatures, has been investigated by conventional transmission electron microscopy. This irradiation condition is shown to produce linear, yet segmented, tracks of damaged material, approximately aligned with the incident irradiation direction, throughout the entire crystal thickness of 22μm. The cross sectional density of damage tracks is in close agreement with the ion fluence. Two specific characteristics of the track morphology have been studied, namely, their continuity and angular spread. The continuity of the tracks does not appear to follow threshold-like behavior within the electronic loss range studied here and the angular distribution of the defect track directions is only approximated by the Monte Carlo calculations of TRIM.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bourgault, D., Bouffard, S., Toulemonde, M., Groult, D., Provost, J., Studer, F., Nguyen, N. and Raveau, B., Phys. Rev. B, 39, 6549 (1989).Google Scholar
2. Hensel, B., Roas, B., Henke, S., Hopfengärtner, R., Lippert, M., Ströbel, J.P., Vildic, M., Saemann-Ischenko, G. and Klaumunzer, S., Phys. Rev. B, 42, 4135 (1990).Google Scholar
3. Hardy, V., Groult, D., Hervieu, M., Provost, J. and Raveau, B., Nucl. Instr. and Meth. B54, 472 (1991).CrossRefGoogle Scholar
4. Civale, L., Marwick, A.D., Worthington, T.K., Kirk, M.A., Thompson, J.R., Krusin-Elbaum, L., Sun, Y., Clem, J.R. and Holtzberg, F., Phys. Rev. Lett. 67, 648 (1991).Google Scholar
5. Konczykowski, M., Rullier-Albenque, F., Yacoby, E.R., Shaulov, A., Yeshurun, Y. and Lejay, P., Phys. Rev. B, 44, 7167(1991).Google Scholar
6. Bourgault, D., Hervieu, M., Bouffard, S., Groult, D. and Raveau, B., Nucl. Instr. and Meth. B42, 61 (1989).Google Scholar
7. Balanzat, E., Jousset, J.C. and Toulemonde, M., Nucl. Instr. and Meth. B32, 368 (1988).Google Scholar
8. Audouard, A., Balanzat, E., Bouffard, S., Jousset, J.C., Chamberod, A., Dunlop, A., Lesueur, D., Fuchs, G., Spohr, R., Vetter, J. and Thomé, L., Phys. Rev. Lett. 65, 875 (1990).Google Scholar
9. Holtzberg, F. and Feild, C., Eur. J. Solid State Inorg. Chem. 27, 107 (1990).Google Scholar
10. Ziegler, J.F. Biersack, J.P. and Littlemark, U., The Stopping Range of Ions in Solids. (Pergamon Press, New York 1985), p. 79.Google Scholar
11. Civale, L., these proceedings.Google Scholar
12. Wheeler, R., Ultramicroscopy 35 1, (1991) 59.CrossRefGoogle Scholar
13. Barrett, C. and Massalski, T.B., Structure of Metals, 3rd ed. (Pergamon Press, New York, 1980), pp. 3050.Google Scholar
14. Dartyge, E. and Sigmund, P., Phys. Rev B, 22, 5429 (1985).Google Scholar