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TEM Studies of Ordering in MOCVD-Grown (GaIn)P on GaAs

Published online by Cambridge University Press:  26 February 2011

S. McKernan ,
B. C. De Cooman ,
C. B. Carter ,
D. P. Bour  and
J. R. Shealy
S. McKernan
Affiliation:
Dept. of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
B. C. De Cooman
Affiliation:
Dept. of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
C. B. Carter
Affiliation:
Dept. of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
D. P. Bour
Affiliation:
School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, NY 14853
J. R. Shealy
Affiliation:
School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, NY 14853
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Abstract

GaxIn(1−x)P epilayers grown on GaAs substrates by MOVPE, for different growth temperatures and values of x∼0.5, have been studied by electron microscopy. The results indicate that under certain conditions the ternary epilayer is ordered parallel to the (111) plane. Dark-field images obtained using the superlattice reflections reveal ordered domains of different orientations. High-resolution images have been obtained from the ordered domains. The structure of these domains is not perfect but contains many planar faults parallel to the growth surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 637
Copyright
Copyright © Materials Research Society 1988

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References

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