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Tem Structure Investigations of Low-Temperature MBE Grown Inalas Layers on INP<001> Substrate

Published online by Cambridge University Press:  25 February 2011

P. Werner ,
Z. Liliental-Weber ,
K.M. Yu ,
E.R. Weber ,
Z. Rek  and
R. Metzger
P. Werner
Affiliation:
Materials Sciences Div., Lawrence Berkeley Laboratory, Univ.California, Berkeley, CA 94720
Z. Liliental-Weber
Affiliation:
Materials Sciences Div., Lawrence Berkeley Laboratory, Univ.California, Berkeley, CA 94720
K.M. Yu
Affiliation:
Materials Sciences Div., Lawrence Berkeley Laboratory, Univ.California, Berkeley, CA 94720
E.R. Weber
Affiliation:
Materials Sciences Div., Lawrence Berkeley Laboratory, Univ.California, Berkeley, CA 94720
Z. Rek
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford University, CA 94309
R. Metzger
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
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Abstract

The real crystal structure of In0.52A10.48As layers grown on InP<001> substrate as a function of the growth temperature (between 150°C and 450°C) was investigated. The following structural / electrical analyses were applied to the samples: transmission electron microscopy (TEM), x-ray diffraction and particle induced x-ray emission (PIXE). In the temperature range between 200°C and 450°C good epitaxial growth of InAlAs layers can be achieved with a low density of dislocations and stacking faults. Ordering of group-III elements on {111} planes was observed for these layers. Structure models of such ordered domains are discussed. At growth temperatures below 300 °C additional As (≈2%) is incorporated in the lattice. Growth at temperatures below 200°C leads to the formation of pyramidal defects with As grains in their cores. As-grown as well as annealed InAlAs layers show a nearly constant, high electrical resistance (106-107Ωcm) in the whole temperature range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 347
Copyright
Copyright © Materials Research Society 1992

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References

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