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TEM Samples of Semiconductors Prepared by a Small-Angle Cleavage Technique

Published online by Cambridge University Press:  21 February 2011

J. P. McCaffrey
J. P. McCaffrey*
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Montreal Rd. Labs, Bldg. M-50, Ottawa, Ontario, K1A 0R6, Canada
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Abstract

A small-angle cleavage technique has been developed for transmission electron microscopy (TEM) of semiconductors and related materials. In this technique, samples are prepared by back-thinning the material to a prescribed thickness, back-scribing the material at a specific angle to a standard cleavage plane, and cleaving along these scribe lines. A second cleave is made along the standard cleavage plane to intersect the first cleave, forming a thin wedge. This wedge is mounted on a grid, providing an electron transparent tip free of ion milling artifacts.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 254: Symposium W – Specimen Preparation for Transmission Electron Microscopy of Materials III , 1991 , 109
Copyright
Copyright © Materials Research Society 1992

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References

1. Specimen Preparation for Transmission Electron Microscopy of Materials, edited by Bravman, John C., Anderson, Ron M., and McDonald, Michael L. (Mater. Res. Soc. Proc. 115 , Pittsburgh, PA 1988).Google Scholar
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