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Tem Analysis of the Observed Phases During the Growth of Oriented Diamond on Nickel Substrates

Published online by Cambridge University Press:  15 February 2011

W. Liu ,
P. C. Yang ,
D. A. Tucker ,
C. A. Wolden ,
R. F. Davis ,
J. T. Glass ,
J. T. Prater  and
Z. Sitar
W. Liu
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC 27695.
P. C. Yang
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC 27695.
D. A. Tucker
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC 27695.
C. A. Wolden
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC 27695.
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC 27695.
J. T. Glass
Affiliation:
Kobe Steel USA, Inc. RTP, Durham, NC 27709.
J. T. Prater
Affiliation:
Army Research Office, RTP, Durham, NC 27709.
Z. Sitar
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC 27695.
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Abstract

Transmission electron microscopy (TEM) was used to investigate the interfacial microstructures and phases involved in the nucleation and growth of the oriented diamond on Ni substrates by a multi-step growth process. A molten surface layer is formed during the process, which appears to be critical for both promotion of the diamond nucleation and suppression of graphite formation. Cross-section TEM analysis revealed that a polycrystalline nickel carbide interfacial structure exists between the diamond particles and the single crystal Ni substrate. X-ray diffraction analysis (XRD) identified the carbide phase as Ni4C. It is suggested that the Ni4C is formed in the molten layer and stabilizes sp3C precursor for diamond nucleation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 457
Copyright
Copyright © Materials Research Society 1996

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