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Telegraph Noise as A Probe of Microscopic Hydrogen Motion in Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

Lisa M. Lust  and
J. Kakalios
Lisa M. Lust
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455
J. Kakalios
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455
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Abstract

Time traces of conductance fluctuations in the co-planar current of hydrogenated amorphous silicon (a-Si:H) display sharp jumps between discrete resistance levels, termed random telegraph switching noise (RTSN). Measurements of the temperature dependence and effects of light soaking of the RTSN in n-type doped a-Si:H are reported. The rise times between the two level fluctuators yield activation energies and attempt to hop frequencies for microscopic hydrogen motion which agree with those obtained from NMR experiments. Computer simulations of a dynamical percolation random resistor network support the suggestion that the RTSN arises from local diffusion processes altering the conductance of inhomogeneous current filaments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 401
Copyright
Copyright © Materials Research Society 1995

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References

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