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Ta-Si-N and Si3N4 Encapsulants for InP

Published online by Cambridge University Press:  25 February 2011

J. S. Reid ,
R. P. Ruiz ,
E. Kolawa ,
J. S. Chen ,
J. Madok  and
M -A. Nicolet
J. S. Reid
Affiliation:
California Institute of Technology, Pasadena, CA 91125
R. P. Ruiz
Affiliation:
Jet Propulsion Laboratory, Pasadena, CA 91109
E. Kolawa
Affiliation:
California Institute of Technology, Pasadena, CA 91125
J. S. Chen
Affiliation:
California Institute of Technology, Pasadena, CA 91125
J. Madok
Affiliation:
University of California, Los Angeles, CA 90024
M -A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, CA 91125
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Abstract

Thin films of sputtered, amorphous Ta36Si14N50 (a metallic conductor) and Si3N4 (an insulator) were evaluated as encapsulants for (100)-oriented InP substrates. Thicknesses of both films were approximately 100 nm. During a 15 min annealing in Ar, liberated phosphorus was gettered by a <Si>ISiO2ITa(100 nm) collector placed face-to-face on encapsulated or non-encapsulated InP. The stability of the InP with the encapsulant was characterized by backscattering spectrometry, scanning electron microscopy, and x-ray diffraction. As measured by 4He++ backscattering spectrometry, detectable amounts of phosphorus do not arise in the Ta collectors for the Ta-Si-N and Si3N4 encapsulation schemes until 650 and 700°C, respectively. Failure of the Ta36Si14N50 film is catastrophic at 700°C whereas the Si3N4 film degrades locally commencing at 600°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 555
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Farrow, R. F. C., J. Phys. D., 7, 2436 (1974).CrossRefGoogle Scholar
[2] Oberstar, J. D., Streetman, B. G., Baker, J. E., Williams, P., J. ElectroChem. Soc., 1312 and 1320 (1982).CrossRefGoogle Scholar
[3] Biedenbender, M. D. and Kapoor, V. J., J. ElectroChem. Soc., 137, 1537 (1990).CrossRefGoogle Scholar
[4] Oberstar, J. D., Streetman, B. G., Baker, J. E., Finnegan, N. L., et al., Thin Solid Films, 94, 149 and 161 (1982).CrossRefGoogle Scholar
[5] Farley, C. W., Kim, T. S., Streetman, B. G., Lareau, R. T., Williams, P., Thin Solid Films, 146, 221 (1987).CrossRefGoogle Scholar
[6] Gleason, K. R., Dietrich, H. B., Henry, R. L., Cohen, E. D., and Bark, M. L., Appl. Phys. Lett., 32, 578 (1978).CrossRefGoogle Scholar
[7] Nishioka, T. and Ohmachi, Y., J. Appl. Phys., 51, 5789 (1981).CrossRefGoogle Scholar
[8] Oberstar, J. D., Streetman, B. G., Samman, E. A., Thin Solid Films, 81, 347 (1981).CrossRefGoogle Scholar
[9] Donnelly, J. P. and Hurwitz, C. E., Solid-State Electronics, 23, 943 (1980).CrossRefGoogle Scholar
[10] Donnelly, J. P. and Hurwitz, C. E., Appl. Phys. Lett., 31, 418 (1977).CrossRefGoogle Scholar
[11] Singh, S., Bonner, W. A., Camlibel, I., Grodkiecz, W. H., et al., Appl. Phys. Lett., 38, 349 (1981).CrossRefGoogle Scholar
[12] Kasahara, J., Gibbons, J. F., Magee, T. J., and Peng, J., J. Appl. Phys., 51, 4119 (1980).CrossRefGoogle Scholar
[13] Wilkie, J. H. and Sealy, B. J., Thin Solid Films, 162, 49 (1988).CrossRefGoogle Scholar
[14] del Alamo, J. A. and Mizutani, Takashi, J. Appl Phys., 62, 3456 (1987).CrossRefGoogle Scholar
[15] Bhattacharya, P. K., Goodman, W. H., and Rao, M. V., J. Appl. Phys., 55, 509 (1984).CrossRefGoogle Scholar
[16] Pande, K. P., Nair, V. R. K., and Aina, O., Appl. Phys. Lett., 45, 532 (1984).CrossRefGoogle Scholar
[17] Dobabalapur, A., Farley, C. W., Lester, S. D., Kim, T. S., and Streetman, B. G., J. Electronic Materials, 16, 283 (1987).CrossRefGoogle Scholar
[18] Davies, D. E., Potter, W. D., and Lorenzo, J. P., J. ElectroChem. Soc, 125, 1845 (1978).CrossRefGoogle Scholar
[19] Liau, Z. L., Appl. Phys. Lett., 58, 1869 (1991).CrossRefGoogle Scholar
[20] Molarius, J. M., Kolawa, E., Morishita, K., and Nicolet, M -A., J. Electrochem Soc, 138, 834 (1991).CrossRefGoogle Scholar
[21] Chen, J. S., Kolawa, E., Garland, C. M., Nicolet, M -A., J. Appl. Phys., 70, 1369 (1991).Google Scholar
[22] Kolawa, E., Chen, J. S., Reid, J. S., Pokela, P. J., and Nicolet, M -A., J. Appl. Phys., 70, 1369 (1991).CrossRefGoogle Scholar
[23] Kolawa, E., Molarius, J. M., Nieh, C. W., Nicolet, M-A., J. Vac. Sci. A., 8, 3006 (1990).CrossRefGoogle Scholar
[24] Binary Alloy Phase Diagrams, Edited by Massalski, T. B., Bennett, L. H., Murray, J. L., Baker, H. (ASM International, Metals Park, OH, 1991).Google Scholar
[25] Boiler, H. and Parme, E., Acta Cry st., 16, 1095 (1963).CrossRefGoogle Scholar
[26] Notten, P. H. L., J. ElectroChem. Soc., 138, 243 (1991).CrossRefGoogle Scholar