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Tapping-mode AFM - Force Measurement Capabilities on Compliant Surfaces

Published online by Cambridge University Press:  01 February 2011

Ijeoma M. Nnebe  and
James W. Schneider
Ijeoma M. Nnebe
Affiliation:
Departments of Chemical Engineering, Carnegie Mellon University Pittsburgh, PA 15213, U.S.A.
James W. Schneider
Affiliation:
Departments of Chemical Engineering, Carnegie Mellon University Pittsburgh, PA 15213, U.S.A. Biomedical Engineering, Carnegie Mellon University Pittsburgh, PA 15213, U.S.A.
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Abstract

We investigate the feasibility of tapping-mode atomic force microscopy (TM-AFM) as a force measurement tool for compliant surfaces. For quantitative extraction of the tip-sample interactions, numerical modeling of the cantilever dynamics is required using a defined form for the interaction, with the results compared to experiment. Through TM force measurements on silicon, we illustrate that a forced damped harmonic oscillator model sufficiently represents the motion of the cantilever. Particularly for liquid operation, distance-dependent dissipation must be included in the model for accurate quantification of the tip-sample interactions and for successful reproduction of experimental force curves. This dissipation is not due to damping from the bulk viscous medium, but is likely frictional in origin. This investigation shows that TM force measurement in liquid is feasible and could be particularly advantageous for the measurement of intermolecular interactions from soft and easily deformed molecular layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 790: Symposium P – Dynamics in Small Confining Systems–2003 , 2003 , P4.3
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

[1] Florin, E.-L., Moy, V. T., and Gaub, H. E., Science, 264, 415 (1994).Google Scholar
[2] Biggs, S., J. Chem. Soc. Faraday Trans., 92, 2783, (1996).Google Scholar
[3] Kohonen, M. M., Karaman, M. E., and Pashley, R. M., Langmuir, 16, 5749, (2000).Google Scholar
[4] Green, J.-B. D., Novoradovsky, A., and Lee, G. U., Langmuir, 15, 238, (1999).Google Scholar
[5] Fritz, M., Radmacher, M., Cleveland, J. P., Allersma, M. W., Stewart, R. J., Gieselmann, R., Janmey, P., Schmidt, C. F., and Hansma, P. K., Langmuir, 11, 3529, (1995).Google Scholar
[6] Nnebe, I. and Schneider, J. W., Langmuir, (2004).Google Scholar
[7] Revenko, I. and Proksch, R., J. Appl. Phys., 87, 526 (2000)Google Scholar
[8] García, R. and Pérez, R., Surface Science Reports, 47, 197, (2002).Google Scholar
[9] O'Shea, S. J. and Welland, M. E., Langmuir, 14, 4186, (1998).Google Scholar
[10] Gauthier, M. and Tsukada, M., Phys. Rev. Lett., 85, 5348, (2000).Google Scholar
[11] Marcus, M. S., Carpick, R. W., Sasaki, D. Y., and Eriksson, M. A., Physical Review Letters, 88, 226103–1, (2002).Google Scholar
[12] Chen, G. Y., Warmack, R. J., Oden, P. I., and Thundat, T., Journal of Vacuum Science & Technology, B, 14, 1313, (1996).Google Scholar
[13] Ma, H., Jimenez, J., and Rajagopalan, R., Langmuir, 16, 2254, (2000).Google Scholar