Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T15:47:57.805Z Has data issue: false hasContentIssue false

Tailored Microstructures for Infrared Detection

Published online by Cambridge University Press:  25 February 2011

Quark Y. Chen
Affiliation:
Dept. of Materials Science & Engineering, Stanford University, Stanford, CA 94305
C. W. Bates Jr.
Affiliation:
Dept. of Materials Science & Engineering, Stanford University, Stanford, CA 94305
Get access

Abstract

Using the effective medium approximation[1–4] and the theory of photoemission from small particles,[5] we look into the design-rules of infrared materials based upon the metalsemiconductor random heterostructures with Ag particles embedded in the semiconductor. It is found that semiconductor host matrices with higher dielectric constants show better optical absorption in the infrared and that optical properties are closely related to microstructural parameters such as volume fraction of metal particles, percentage of aggregation and particle size. Cu, Ag and Au particles all show similar characteristics. We synthesized materials with small silver particles embedded in Si. Their microstructures are analysized using X-ray diffraction, electron microscopy and sputter Auger profiling. Finally, we present the optical properties of these materials and make comparisons with our theoretical results.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Stroud, D. and Pan, F. P., Phys. Rev. B, 17, 1602 (1978).Google Scholar
2. Sheng, P., Phys. Rev. Lett., 45, 60 (1980).CrossRefGoogle Scholar
3. Garland, J. C. and Tanner, D. B.(editors), Electrical Transport and Optical Properties of Inhomogeneous Meduia, AlP Conference proceeding, No.40, AlP (1978).Google Scholar
4. Alexander, N. V. and Bates, C. W. Jr., Solid State Comm., 51, 331 (1984)Google Scholar
5. Chen, Q. Y. and Bates, C. W. Jr, Phys. Rev. Lett. 51 (21), 2737 (1986).CrossRefGoogle Scholar
6. Schelv, M. Y., SPIE, Vol.348, 75 (1982)Google Scholar
7. Beneking, H., IEEE Trans. Electron. Devices. ED-29, 1431 (1982).Google Scholar
8. Roth, W. et al., Electron. Lett., 19, 554 (1983).Google Scholar
9. Bates, C. W. Jr., Phys. Rev. Lett., 47 (3), 204 (1981).CrossRefGoogle Scholar
10. Hensel, J. C., et at., Phys. Rev. Lett. 54 (16), 1840 (1985).Google Scholar
11. Yamaguchi, S., Surface Science, 138, 449 (1984).CrossRefGoogle Scholar
12. Wooten, F., Optical Properties of Solids, AP, 1972.Google Scholar
13. Hughes, A. E. and Jain, S. C., Adv. in Phys., 28 (6), 717 (1979).CrossRefGoogle Scholar
14. Arnold, M., et al., Crystal Res. Technol., 18 (8),1015 (1983).Google Scholar