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Synthesis of SiO2 Nanowires and CdS/SiO2 Composite Nanowires and Investigation of Their Electron Field Emission Properties
Published online by Cambridge University Press: 11 February 2011
Abstract
A thermal evaporation method was used to obtain SiO2 and CdS/SiO2 nanowires by heating Si substrates coated with a gold thin film in a quartz tube furnace. During growth, pure CdS powder was placed at the heating zone in the furnace, serving as the CdS source for the CdS/SiO2 composite nanowires. It was found that both non-porous and porous Si substrates served as the Si source for the growth of SiO2 nanowires and the CdS/SiO2 composite nanowires. It was also found that the effect of the temperature gradient in the reaction chamber plays an important role in the density distribution of different nanowires (SiO2 or CdS/SiO2 nanowires). The electron field emission properties of these nanowires were investigated using an electron field emission microscope equipped with a Faraday cup.
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- Copyright © Materials Research Society 2003