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Synthesis of Si Nanowires by Electroless Etching Technique and Their Integration Into I-III-VI2 Thin Films For Solar Cells

Published online by Cambridge University Press:  11 January 2012

H. Karaagac ,
M. Parlak  and
M. Saif Islam
H. Karaagac
Affiliation:
Department of Electrical and Computer Engineering, University of California at Davis, CA, 95616, USA
M. Parlak
Affiliation:
Department of Physics, Middle East Technical University, 06531 Ankara, Turkey
M. Saif Islam
Affiliation:
Department of Electrical and Computer Engineering, University of California at Davis, CA, 95616, USA
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Abstract

Si nanowires (NWs) have been fabricated by Ag-assisted electroless etching technique using an HF/AgNO3 aqueous solution. Scanning electron microscopy (SEM) measurements have revealed that a highly dense array of Si NWs with length of ∼1.4 μm is formed over the surface of both n-type and p-type Si (100) substrates. Following the fabrication of Si NWs, electron-beam evaporated p-type AgGa0.5In0.5Se2 thin film was deposited on the n-type Si NWs to form p-n heterojunction solar cells. The fabricated solar cells yield a 5.50% power conversion efficiency under AM (1.5) illumination.

Keywords

thin filmnanostructurephotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1408: Symposium BB – Functional Nanowires and Nanotubes , 2012 , mrsf11-1408-bb20-21
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

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