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Synthesis of High-K Titanium Oxide Thin Films Formed by Metalorganic Decomposition

Published online by Cambridge University Press:  10 February 2011

Hisashi Fukuda ,
Yoshihiro Ishikawa ,
Seiogo Namioka  and
Shigeru Nomura
Hisashi Fukuda
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran-shi, Hokkaido 050-8585, Japan E-mail address: [email protected]
Yoshihiro Ishikawa
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran-shi, Hokkaido 050-8585, Japan
Seiogo Namioka
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran-shi, Hokkaido 050-8585, Japan
Shigeru Nomura
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran-shi, Hokkaido 050-8585, Japan
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Abstract

Titanium oxide (TiO2) thin ftlms were formed on a Si substrate by metalorganic decomposition(MOD) at temperatures ranging from 600 to 1100°C. As-deposited films were in the amorphous state and were completely transformed after annealing at 600°C to a crystalline structure with anatase as its main component. During crystallization, a reaction between TiO2 and Si occurred at the interface, which resulted in the formation of a thin interfacial SiO2 layer. Capacitance-voltage measurement showed good dielectric properties with a maximum dielectric constant of 76 for films annealed at 700°C. For the crystallized TiO2 films, the interface trap density was 1 × 1011 cm−2 eV−1, and the leakage current was 1 × 10−8 A/cm2 at 0.2 MV/cm. The modified structure of TiO2/SiO2/Si is expected to be suitable for the dielectric layer in an integrated circuit in place of conventional SiO2 films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 606: Symposium NN – Chemical Processing of Dielectrics, Insulators & Electronic Ceramics , 1999 , 163
Copyright
Copyright © Materials Research Society 2000

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