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Synthesis of GaN Nanostructures at Low Temperatures by Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

Christopher Y. Chow ,
Balaji Raghothamachar ,
Joan J. Carvajal ,
Hui Chen  and
Michael Dudley
Christopher Y. Chow
Affiliation:
[email protected], Stony Brook University, Materials Science & Engineering, Stony Brook, NY, 11794, United States
Balaji Raghothamachar
Affiliation:
[email protected], Stony Brook University, Materials Science & Engineering, 314 Old Engineering, Stony Brook, NY, 11794, United States
Joan J. Carvajal
Affiliation:
[email protected], Universitat Rovira i Virgili, Physics and Crystallography of Materials, Tarragona, CAT, 43007, Spain
Hui Chen
Affiliation:
[email protected], Stony Brook University, Materials Science & Engineering, Stony Brook, NY, 11794, United States
Michael Dudley
Affiliation:
[email protected], Stony Brook University, Materials Science & Engineering, Stony Brook, NY, 11794, United States
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Abstract

In this study, we report on the synthesis of gallium nitride (GaN) nanopowders on boron nitride (BN) substrates both with and without the use of metal catalyst by chemical vapor deposition (CVD). The synthesis process is based on the reaction between gallium (Ga) atoms from the decomposition of gallium acetylacetonate and ammonia (NH3) gas molecules. Using this process, gallium nitride (GaN) nanopowders have been synthesized at temperatures as low as 400°C, lower than previously reported. The grown nanopowders were characterized by SEM, EDX and TEM. Analysis reveals that higher yields were obtained by treating the BN substrates with Ni catalyst. Experiments to study the effect of growth conditions on the morphology of the nanopowders and analyze the growth mechanism are ongoing.

Keywords

chemical vapor deposition (CVD) (deposition)III-Vnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1080: Symposium O – Semiconductor Nanowires–Growth, Physics, Devices and Applications , 2008 , 1080-O08-01
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Nakamura, S., Pearton, S., Fasol, G., The Blue Laser Diode, 2nd. Ed., Springer-Verlag, Berlin (2000)Google Scholar
2. Gil, B., Group III nitride semiconductor compounds, Oxford Science Publications, Oxford (1998)Google Scholar
3. Law, M., Goldberger, J., Yang, P., Annu. Rev. Mater. Res. 34, 83 (2004)Google Scholar
4. Chang, K.W., Wu, J.J., J. Phys. Chem. B 106, 7796 (2002); Appl. Phys. A 77, 769 (2003)Google Scholar
5. Morkoç, H., Strite, S., J. Vac. Sci. Technol. B 10(4), 1242–1244 (1992)Google Scholar
6. Johnson, W.C., Parsons, J.B., Crew, M.C., J. Phys. Chem. 36, 2651 (1932)Google Scholar
7. Shibata, M., Furuya, T., Sakaguchi, H., Kuma, S., J. Crystal Growth 196, 47 (1999)Google Scholar
8. Wu, H., Hunting, J., Uheda, K., Lepak, L., Konkapaka, P., DiSalvo, F.J., Spencer, M.G., J. Crystal Growth, 279, 303 (2005)Google Scholar
9. L'vov, B.V., Thermochim. Acta, 360, 85 (2000)Google Scholar
10. Zhao, H.Z., Lei, M., Yang, X., Jian, J.K., Chen, X.L., J. Am. Chem. Soc. 127, 15722 (2005)Google Scholar
11. He, M., Minus, I., Zhou, P., Mohammed, S., Halpern, J., Jacobs, R., Sarney, W., SalamancaRiba, L., Dispute, R.D., Appl. Phys. Lett. 77, 3731 (2000).Google Scholar
12. Carvajal, J.J., Gomez, N., Bai, J., Dudley, M., Rojo, J. C., Proc. SPIE 6121, 61210E-2 (2006)Google Scholar