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Synthesis of Diamond by Laser-Induced CVD

Published online by Cambridge University Press:  28 February 2011

K. Kitahama ,
K. Hirata ,
H. Nakamatsu ,
S. Kawai ,
N. Fujimori  and
T. Imai
K. Kitahama
Affiliation:
The institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki 567 Japan
K. Hirata
Affiliation:
The institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki 567 Japan
H. Nakamatsu
Affiliation:
The institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki 567 Japan
S. Kawai
Affiliation:
The institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki 567 Japan
N. Fujimori
Affiliation:
Sumitomo Electric Industries, Ltd., Itami Laboratories, 1-1 Koyakita, l-chome, Itami-shi 664 Japan
T. Imai
Affiliation:
Sumitomo Electric Industries, Ltd., Itami Laboratories, 1-1 Koyakita, l-chome, Itami-shi 664 Japan
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Abstract

Synthesis of diamond thin-films has been tried by an ArF excimer laser-induced chemical vapor deposition (LCVD) technique, using acetylene diluted with hydrogen as a source gas and a silicon wafer as a substrate. In these experiments, irradiation geometry, substrate temperature and laser power density were varied. Upon irradiation by a focused laser beam, deposition of diamond on substrates heated above 400°Cwas observed, and was confirmed by reflection electron diffraction (RED) photographs. Homogeneity of the diamond films was improved by irradiation parallel to the substrate. These facts suggest that the formation of diamond proceeds through multiple photon decomposition of the reactant gas, and that electronic excitation of gas phase rather than that of substrate or adsorbate layer is essential to form diamond.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 309
Copyright
Copyright © Materials Research Society 1987

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