Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-25T15:52:30.221Z Has data issue: false hasContentIssue false

Synthesis of Cu-In-S Fluorescent Nanocrystals

Published online by Cambridge University Press:  01 February 2011

Kosuke Watanabe
Affiliation:
[email protected], Kyushu University, Interdiscplinary Graduate School of Engineering Sciences, 6-1,Kasugakoen, Kasuga, 816-8580, Japan, +81-92-583-8891, +81-92-583-8891
Masato Uehara
Affiliation:
[email protected], Kyushu University, Interdiscplinary Graduate School of Engineering Sciences, 6-1,Kasugakoen, Kasuga, 816-8580, Japan, +81-92-583-8891, +81-92-583-8891
Hiroyuki Nakamura
Affiliation:
[email protected], Kyushu University, Interdiscplinary Graduate School of Engineering Sciences, 6-1,Kasugakoen, Kasuga, 816-8580, Japan, +81-92-583-8891, +81-92-583-8891
Hideaki Maeda
Affiliation:
[email protected], Kyushu University, Interdiscplinary Graduate School of Engineering Sciences, 6-1,Kasugakoen, Kasuga, 816-8580, Japan, +81-92-583-8891, +81-92-583-8891
Get access

Abstract

CuInS2 (CIS) fluorescent nanocrystals (NCs) were obtained by heating organic metal complex. The photoluminescence (PL) originated from the donor-acceptor, and the quantum yield (QY) was achieved at 6%. Furthermore, we doped some metal ions (Zn2+, Cd2+ or Ag+) by the post heat-treatment in the organic coordinating solvent in order to tune the band gap of NCs. By this post treatment, the alteration of NCs structure was suggested, such as changing into an alloying and composite structure. In Zn-doping, the PL wavelength was widely tuned from 535 to 650 nm by alloying between CIS and ZnS. Moreover, PL intensity was increased with these structure alterations. In particular, the materials doped with Zn or Cd achieved respective QY of 25% and 40%.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Watson, A.; Wu, X.; Bruchez, M., BioTechniques 2003, 34, 296303 Google Scholar
[2] Castro, S.L.; Bailey, S.G.; Raffaelle, R.P.; Banger, K.K.; Hepp, A.F., J. Phys. Chem. B 2004, 108, 1242912435.Google Scholar
[3] Nakamura, H.; Kato, W.; Uehara, M.; Nose, K.; Omata, T.; Matsuo, S.O.Y.; Miyazaki, M.; Maeda, H., Chem. Mater. 2006, 18, 33303335.Google Scholar
[4] Yu, K.; Singh, S.; Patrito, N.; Chu, V., Langmuir 2004, 20, 1116111168 Google Scholar
[5] Garcia, J.A.; Ruzafa, J.M.; Rodriguez, A.P.; Rodriguez, A. R.; Morante, J.R.; Scheer, R., Thin Solid Fiim 2000, 361–362, 208212.Google Scholar
[6] Kumar, S.S.; Khadar, M.A.; Dhara, S.K.; Ravindran, T.R.; Nair, K.G.M., Nuclear Instruments and Methods in Physics Research B 2006, 251, 435440.Google Scholar
[7] Vasilevskiy, M.I.; Rolo, A.G.; Gomes, M.J.M.; Vikhrova, O.V.; Ricolleau, C., J. Phys.: Condens. Matter 2001, 13, 34913509.Google Scholar
[8] Handbook of Chem. & Phys. 79th Edition.Google Scholar
[9] Sugano, T.; Kawanishi, T., DICTIONARY of SEMICONDUCTOR TERMS 1999, The Nikkan Kogyo Shimbun, Ltd. Google Scholar