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synthesis of crystalline carbon nitride by chemical vapor deposition

Published online by Cambridge University Press:  10 February 2011

Yafei Zhang ,
Hulin Li  and
Qunji Xue
Yafei Zhang
Affiliation:
Department of Physics, Lanzhou University, Lanzhou 730000, China
Hulin Li
Affiliation:
Department of Chemistry, Lanzhou University, Lanzhou 730000, China
Qunji Xue
Affiliation:
Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, China Academy of Sciences, Lanzhou 730000, China
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Abstract

Crystalline carbon nitride films have been synthesized in a rf plasma assisted hot filament chemical vapor deposition system. Large crystalline grains up to ∼10 μm in size as well as film-like regions are observed in the morphology of the films. β-C3N4 with two groups of lattice parameters ( one is consistent with the theoretical value and the other is 3% smaller) in the deposited films on polycrystalline Ni substrate has been revealed by x-ray diffraction spectrum (XRD). No Raman shift peaks have been found evidently by Raman scattering measurement, but some presently unknown diffraction peaks appeared in the XRD spectrum. It is proposed that there are possible unknown structures of crystalline C-N in the films. Heteroepitaxial growth of crystalline β-C3N4 has also been tried via a buffer layer of α-SiC on Si (100) substrate. The XRD pattern of a film show that there are only two main peaks at 2.79 Å and 1.87 Å corresponding to the (200) and (300) crystalline planes of the theoretical β-C3N4 The two main peaks indicate heteroepitaxial growth along the (100) direction of β-C3N4.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 410: Symposium S – Covalent Ceramics III-Science and Technology of Non-Oxides , 1995 , 317
Copyright
Copyright © Materials Research Society 1996

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References

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