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Synthesis and Structural Characterization of Sol-Gel Derived Barium Zirconium Titanate Thin Films

Published online by Cambridge University Press:  01 February 2011

A. Dixit
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931-3343
A. Savvinov
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931-3343
S.B. Majumder
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931-3343
R.S. Katiyar R. Guo
Affiliation:
Material Research Laboratory, Pennsylvania State University, University Park, PA 16802
A.S. Bhalla
Affiliation:
Material Research Laboratory, Pennsylvania State University, University Park, PA 16802
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Abstract

Barium zirconium titanate (BZT) thin films are attractive candidates for dynamic random access memories and tunable microwave devices. In the present work a wide range of Zr doped BaTiO3 thin films have been prepared by sol-gel technique. X-ray diffraction and micro-Raman scattering studies confirmed the structural phases in the powder and film of BZT and various structural transitions of BaTiO3 as a function of different Zr content compared well with the published result on ceramics and single crystalline BZT. The deposited films had smooth, crackfree and homogeneous microstructure and Zr content has strong influence on the evolution of the microstructures of the films. Some selected compositions of these films were characterized in terms of their dielectric properties and phase transition behavior. BZT film with 20 at % Zr had a ferroelectric to paraelectric transition in the vicinity of room temperature. Efforts are underway to optimize the annealing condition and grow epitaxial BZT films, with various Zr contents, on a suitable single-crystalline substrate.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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