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Synthesis and Properties of GaxMn1-xN films

Published online by Cambridge University Press:  01 February 2011

R. Zhang ,
Y. Y. Yu ,
X. Q. Xiu ,
Z. L. Xie ,
S. L. Gu ,
B. Shen ,
Y. Shi  and
Y. D. Zheng
R. Zhang
Affiliation:
Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology, and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China
Y. Y. Yu
Affiliation:
Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology, and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China
X. Q. Xiu
Affiliation:
Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology, and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China
Z. L. Xie
Affiliation:
Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology, and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China
S. L. Gu
Affiliation:
Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology, and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China
B. Shen
Affiliation:
Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology, and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China
Y. Shi
Affiliation:
Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology, and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China
Y. D. Zheng
Affiliation:
Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology, and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China
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Abstratct:

Mn-doped GaN films were grown by hydride vapor phase epitaxy(HVPE). structural measurements show that Mn may substitute Ga atoms in the GaN lattice. Ferromagnetism is observed in these HVPE grown Mn-doped GaN films, which may come from the GaxMn1−xN phase in the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E9.3
Copyright
Copyright © Materials Research Society 2005

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