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Synthesis and Characterization of Tb-doped AlBNO Films for Electroluminescence Devices

Published online by Cambridge University Press:  31 January 2011

Keiko Masumoto ,
Yuta Iwano ,
Chiharu Kimura ,
Hidemitsu Aoki  and
Takashi Sugino
Keiko Masumoto
Affiliation:
[email protected]@yahoo.co.jp, Osaka university, Suita, Japan
Yuta Iwano
Affiliation:
[email protected], Osaka university, Suita, Japan
Chiharu Kimura
Affiliation:
[email protected], Osaka university, Suita, Japan
Hidemitsu Aoki
Affiliation:
[email protected], Osaka university, Suita, Japan
Takashi Sugino
Affiliation:
[email protected], Osaka university, Suita, Japan
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Abstract

Tb-doped AlBNO (AlBNO:Tb) films with various composition ratios are investigated for luminescence layers of inorganic electroluminescence(EL) devices. Luminescence layers with a wide bandgap and a low dielectric constant are required to realize high performance of EL devices. The ultraviolet-visible radiation absorption measurement and capacitance-voltage (C-V) measurement show that the AlBNO:Tb films have wider bandgap and lower dielectric constant than ZnS which is put to practical use as the host material of the luminescence layer. Photoluminescence (PL) measurement indicates that PL intensity increases with increasing B composition ratio in the range of 5 % - 10 %. Moreover, the suppression factor of the PL intensity can be understood through the annealing experiment. The PL intensity of the film with 800 °C annealing is about 10 times larger than that of the film without annealing. X-ray photoelectron spectroscopy (XPS) measurement suggests that Tb4+ ions decrease compared with Tb3+ ions after annealing treatment. O atoms in the AlBNO:Tb film are dissociated from Tb and bonded to B atoms by annealing treatment. This suggests that decrease of Tb4+ ions is related to increase of the PL intensity.

Keywords

luminescenceoptical propertiesTb
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B13-02
Copyright
Copyright © Materials Research Society 2010

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References

1. Kahng, D., Appl. Phys. Lett. 13, 210 (1968).10.1063/1.1652574Google Scholar
2. Nakayama, A., Taniguchi, T., Kubota, Y., Watanabe, K., Hishita, S., Kanda, H., Appl. Phys. Lett. 87, 211913 (2005).10.1063/1.2135886Google Scholar
3. Adachi, D., Kitaike, R., Ota, J., Toyama, T., Okamoto, H., J. Mater. Sci.: Mater. Electron 18, S71 (2007).Google Scholar
4. Zanatta, A. R., Appl. Phys. Lett. 82, 1395 (2003).10.1063/1.1557318Google Scholar
5. Sarma, D. D., Rao, C. N. R., J. Electron Spectroscopy Relat. Phenomena 20, 25 (1980).10.1016/0368-2048(80)85003-1Google Scholar
6. Reddy, B. M., Saikia, P., Bharali, P., Park, S.-E., Muhler, M., Grunert, W., J. Phys. Chem. C 113, 2452 (2009).Google Scholar
7. Kobayashi, T., Sekine, T., Hirosaki, N., Opt. Mater. 31, 886 (2009).10.1016/j.optmat.2008.10.022Google Scholar