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Synthesis and Characterization of A Metastable (SiC)aN4 Phase

Published online by Cambridge University Press:  21 February 2011

C. Uslu ,
B. Park  and
D. B. Poker
C. Uslu
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332
B. Park
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332
D. B. Poker
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

A metastable C-Si-N compound has been synthesized by high dose N+ implantation into polycrystalline /8-SiC (cubic phase). The thin films formed upon 100 keV implantations were characterized with respect to various ion doses and target temperatures. X-ray diffraction with a position-sensitive detector and cross-sectional transmission electron microscopy revealed that the as-implanted surfaces contained ∼0.15 jttm thick continuously-buried amorphous layers. Rutherford backscattering spectroscopy showed that the peak concentration of nitrogen saturated up to approximately 54 at. % with increasing doses, suggesting a new phase formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 195
Copyright
Copyright © Materials Research Society 1995

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