Hostname: page-component-745bb68f8f-l4dxg Total loading time: 0 Render date: 2025-01-14T02:29:12.263Z Has data issue: false hasContentIssue false
  • English
  • Français

Synchrotron X-Ray Topography as a Non-Destructive Monitor of Damage Accompanying IC Processing

Published online by Cambridge University Press:  28 February 2011

Michael Dudley ,
Franklyn F.Y. Wang ,
Thomas Fanning  and
David Gordon-Smith
Michael Dudley
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794
Franklyn F.Y. Wang
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794
Thomas Fanning
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794
David Gordon-Smith
Affiliation:
Dept. of Engineering, University of Warwick, Coventry CV4 7AL, UK
Get access

Abstract

Synchrotron white beam x-ray topography in transmission geometry has been used to monitor the damage accompanying a Rapid Thermal Processing (RTP) treatment of Si wafers. The behavior of low and high carbon-content Si is contrasted and discussed. The applicability of this technique to this kind of study is demonstrated, with particular emphasis being laid on its non-destructive nature. The general usefulness of the technique as a monitor for damage accompanying IC processing is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 61
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1.] Caxruthers, J. R., in Defects in Silicon, ed. by Bullis, W. M. and Kimmerling, L. C., Proc. of the Electrochemical Society, San Francisco, CA (1983).Google Scholar
[2.] Scott, M., in Application of X-Ray Topographic Methods to Materials Science, ed. by Weissman, S., Balibar, F., and Petroff, J. F., Plenum Press, New York (1984), p. 469.Google Scholar
[3.] Miltat, J. in Characterization of Crystal Growth Defects by X-ray Methods, Tanner, B.K. and Bowen, D.K. (Eds.), Nato ASI Series B: Physics, Vol. 63, Plenum, New York and London, (1980), p. 401.CrossRefGoogle Scholar
[4.] Miltat, J. and Dudley, M., J. Appl. Cryst. 13, 555, (1980).CrossRefGoogle Scholar
[5.] Dudley, M., Wang, F. F. Y., Fanning, T., Tolis, G., Wu, J., and Hodul, D. T., Mater. Lett. 10, 87, (1990).CrossRefGoogle Scholar
[6.] Dudley, M., Wang, F. F. Y., Fanning, T., Tolis, G., Wu, J., and Hodul, D. T., in Defects in Materials, ed. by Bristowe, P. D., Epperson, J. E., Griffith, J. E., and LilienthalWeber, Z., Mat. Res. Soc. Symp. Proc., 209, 511, (1991).CrossRefGoogle Scholar
[7.] Fanning, T., Dudley, M., Wang, F. F. Y., Gordon-Smith, D., and Hodul, D. T., in Symp. F, Rapid Thermal and Integrated Processing, MRS Spring meeting (1991).Google Scholar
[8.] Fairfield, J.M. and Schwuttke, G.H., J. Electrochem. Soc., 113, 1229, (1966).CrossRefGoogle Scholar
[9.] Authier, A., Simon, D. and Senes, A., Phys. Stat. Sol., 26, 469, (1972).CrossRefGoogle Scholar
[10.] Lawrence, J.E., J. Electrochem. Soc., 115, 860, (1968).CrossRefGoogle Scholar
[11.] Holt, D., Supplément J. de Physique FASC 6, C6, 189, (1979).Google Scholar
[12.] Stiffier, S. R., Lasky, J. B., Koburger, C. W., and Berry, W. S., IEEE Trans. on El. Dev., 37, 1253, (1990).CrossRefGoogle Scholar
[13.] Lin, P. S. D., Marcus, R. B., and Sheng, T. T., J. Electrochem. Soc., 130, 1878, (1983).CrossRefGoogle Scholar