Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-29T09:23:23.097Z Has data issue: false hasContentIssue false

Synchrotron X-ray Absorption Spectroscopy Studies of Pt/Si Systems

Published online by Cambridge University Press:  10 February 2011

I. Coulthard
Affiliation:
Department of Chemistry, University of Western Ontario, London, Canada.
S. J. Naftel
Affiliation:
Department of Chemistry, University of Western Ontario, London, Canada.
T. K. Shama
Affiliation:
Department of Chemistry, University of Western Ontario, London, Canada.
Get access

Abstract

Platinum was deposited onto porous silicon by a reductive deposition technique utilizing the inherent reducing power of porous silicon. The resulting deposits were studied by X-ray Absorption Near Edge Structure (XANES) at the Si-K, Pt-M3, 2, and Pt-L 3 ,2 edges. Samples of varying deposition concentrations were studied and were compared with untreated porous silicon and platinum silicides to determine the nature of the deposits and their effect upon the porous silicon substrate itself.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Canham, L.T., Appl. Phys. Lett. 57, p. 1046 (1990).Google Scholar
[2] Namavar, F., Marusha, H.P., and Kalkhoran, N.M., Appl. Phys. Lett. 60, p. 2514 (1992).Google Scholar
[3] Halimaoui, A., Campidelli, Y., Badoz, P.A., and Bensahel, D., J. Appl. Phys. 78, p. 3428 (1995).Google Scholar
[4] Ronkel, F., Schultze, J.W., and Arens-Fischer, R., Thin Sol. Filns 276, p. 40 (1996).Google Scholar
[5] Coulthard, I., Jiang, D.T., Lorimer, J.W., and Sham, T.K., Langmuir 9, p. 3441 (1993).Google Scholar
[6] Gleiter, H., Prog. Mater Sci. 33(4), p. 223 (1989).Google Scholar
[7] Coulthard, I., and Sham, T.K., Appl. Surf. Sci. (in press)Google Scholar
[8] Yang, B.X., Middleton, F.H., Olsson, B.G., Bancroft, G.M., Chen, J.M., Sham, T.K., Tan, K., and Wallace, D.J., Rev. Sci. Instrum. 63, p. 1355 (1992).Google Scholar
[9] Mott, N.F., Proc. Phys. Soc. London A62, p. 416 (1949).Google Scholar