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Synchrotron Topographic Studies of the Influence of Rapid Thermal Processing on Defect Structures in Single Crystal Silicon.

Published online by Cambridge University Press:  26 February 2011

Michael Dudley ,
Franklin F.Y. Wang ,
Thomas Fanning ,
Georgios Tolis ,
Jun Wu  and
David T. Hodul
Michael Dudley
Affiliation:
Dept. of Materials Science & Engineering, Suny at Stony Brook, NY 11794
Franklin F.Y. Wang
Affiliation:
Dept. of Materials Science & Engineering, Suny at Stony Brook, NY 11794
Thomas Fanning
Affiliation:
Dept. of Materials Science & Engineering, Suny at Stony Brook, NY 11794
Georgios Tolis
Affiliation:
Dept. of Materials Science & Engineering, Suny at Stony Brook, NY 11794
Jun Wu
Affiliation:
Dept. of Materials Science & Engineering, Suny at Stony Brook, NY 11794
David T. Hodul
Affiliation:
Varian Research Center, Varian Associates Inc., Palo Alto, CA 94303.
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Abstract

Synchrotron white beam X-ray diffraction topography in transmission geometry has been used to non-destructively investigate defect structures in silicon single crystal wafers, both prior and subsequent to a 60 second rapid thermal processing (RTP) treatment at 1050°C. Prior to RTP dislocations, precipitates and swirl defects were observed and characterized. Following RTP the following effects were observed: glide of individual dislocations and dislocation multiplication; and the enhancement of the strain field associated with the swirl defects. Precipitates appeared unaffected by RTP. This work shows that synchrotron topography is capable of non-destructively revealing significant dislocation motion induced by RTP under conditions were such motion is not thought to occur. This dislocation motion is likely to be detrimental to device performance. The technique enables determination of the conditions required to avoid such dislocation motion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 511
Copyright
Copyright © Materials Research Society 1991

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References

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