Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-19T02:53:50.357Z Has data issue: false hasContentIssue false
  • English
  • Français

Survey of the Thermodynamics and Kinetics of Crystallization of Si and Ge

Published online by Cambridge University Press:  15 February 2011

D. Turnbull
D. Turnbull*
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138, USA
Get access

Abstract

The thermodynamic interrelations of the crystalline (c-sc), amorphous semiconducting (a-sc) and liquid metal (lm) states of Si and Ge, based on the existing thermal data, are reviewed. Then the kinetics of the interfacial processes in the growth of c-sc and a-sc into undercooled lm and the conditions for transition from c-sc to a-sc growth are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 131
Copyright
Copyright © Materials Research Society 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Turnbull, D., J. de Physique, Colloque, in press (1983).Google Scholar
2.Turnbull, D., Mats. Res. Soc. Symp. Proc. (ed. by Picraux, S.T. and Choyke, W.J.), North Holland, Amsterdam 7, pp. 103–108 (1982).Google Scholar
3. (a)Donovan, E.P., Spaepen, F., Turnbull, D., Poate, J.M. and Jacobson, D.C., submitted to Appl. Phys. Letters.Google Scholar
(b)Donovan, E.P., Ph.D. thesis, Harvard University, Cambridge, Mass., 1982.Google Scholar
4.Czepregi, L., Kennedy, E.F., Mayer, J.W. and Sigmon, T.W., J. Appl. Phys. 49, 3906 (1978).Google Scholar
5.Bagley, B.G. and Chen, H.S., Am. Inst. Phys. Conf. Proc. 50, 97 (1979).Google Scholar
6.Spaepen, F. and Turnbull, D., Am. Inst. Phys. Conf. Proc. 50, 50 (1979).Google Scholar
7.Spaepen, F. and Turnbull, D., “Laser Annealing of Semiconductors” (ed. Poate, J.M. and Mayer, J.W.), pp. 15–42, Academic Press, N.Y. (1982).Google Scholar
8.Liu, P.L., Yen, R., Bloembergen, N. and Hodgson, R.T., Appl. Phys. Lett. 34, 864 (1979).Google Scholar
9.Tsu, R., Hodgson, R.T., Tan, T.Y. and Baglin, J.E., Phys. Rev. Lett. 42, 1356 (1979).Google Scholar
10.Liu, J.M., Yen, R., Donovan, E.P., Bloembergen, N. and Hodgson, R.T., Appl. Phys. Lett. 38, 617 (1981).Google Scholar
11.Cullis, A.G., Webber, A.C., Chew, N.G., Poate, J.M. and Baeri, P., Phys. Rev. Lett. 49, 219 (1982).Google Scholar
12.Baeri, P., Foti, G., Poate, J.M. and Cullis, A.G., Phys. Re. Lett. 45, 2036 (1980).Google Scholar
13.Cullis, A.G., Webber, H.C. and Chew, N.G., Appl. Phys. Lett. 40, 998 (1982).Google Scholar
14.Poate, J.M., this volume.Google Scholar
15.Kokorowski, S.A., Olson, G.L. and Hess, L.D., J. Appl. Phys. 53, 94 (1982).Google Scholar