Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-29T08:02:10.848Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface-Related Photoluminescence Effects in GaN

Published online by Cambridge University Press:  11 February 2011

M. A. Reshchikov ,
M. Zafar Iqbal ,
D. Huang ,
L. He  and
H. Morkoç
M. A. Reshchikov
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284, U.S.A.
M. Zafar Iqbal
Affiliation:
On leave in VCU from the Quaid-i-Azam University, Islamabad, Pakistan
D. Huang
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284, U.S.A.
L. He
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284, U.S.A.
H. Morkoç
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284, U.S.A.
Get access

Abstract

Photoluminescence (PL) from GaN epilayers is found to be sensitive to the ambient atmosphere and length of UV exposure. We studied the effect of UV illumination in different ambients including air, oxygen, nitrogen and hydrogen gases on room-temperature PL of GaN grown on sapphire by molecular beam epitaxy. In some samples the PL intensity increased markedly in vacuum as compared to excitation in air, whereas in others it decreased appreciably. While air and oxygen showed strong reversible variation of the PL intensity as compared to vacuum, nitrogen and hydrogen atmospheres led to a very small change. In some samples we observed a shift of the yellow luminescence band with change of ambient, in others no shift was detected. PL intensity also changed during UV irradiation when the sample was in air ambient. Possible reasons for our observations are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L11.2
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Behn, U., Thamm, A., Brandt, O., and Grahn, H. T., J. Appl. Phys 87, 4315 (2000).Google Scholar
2. Reshchikov, M. A., Visconti, P., Jones, K. M., and Morkoç, H., Mat. Res. Soc. Symp. Proc. 680, E5.4 (2001).Google Scholar
3. Readinger, E. D., Luther, B. P., Mohney, S. E., and Piner, E. L., J. Appl Phys. 89, 7983 (2001).Google Scholar
4. Morkoç, Hadis, Cingolani, Roberto, and Gil, Bernard, “Polarization Effects in Nitride Semiconductor Device Structures, and Performance of Modulation Doped Field Effect Transistors” Solid State Electronics, vol. 43, no. 10, pp. 1909–1927, Oct. 1999 Google Scholar
5. Karrer, U., Ambacher, O., and Stutzmann, M., Appl. Phys. Lett. 77, 2012 (2000).Google Scholar
6. Northrup, J. E., Neugebauer, J., Feenstra, R. M., and Smith, A. R., Phys. Rev. B 61, 9932 (2000).Google Scholar
7. Nienhaus, H., Schneider, M., Grabowski, S. P., Mönch, W., Dimitrov, R., Ambacher, O., and Stutzmann, M., Mat. Res. Soc. Symp. Proc. 680E, E4.5 (2001).Google Scholar
8. Bermudez, V. M., J. Appl. Phys. 80, 1190 (1996).Google Scholar
9. Huang, D., Visconti, P., Reshchikov, M. A., Yun, F., King, T., Baski, A. A., Litton, C. W., Jasinski, J., Liliental-Weber, Z., and Morkoç, H., Phys. Stat. Sol. (a) 188, 571 (2001).Google Scholar
10. Ogino, T. and Aoki, M., Jap. J. Appl. Phys. 19, 2395 (1980).Google Scholar
11. Reshchikov, M. A., Morkoç, H., Park, S. S., and Lee, K. Y., Mat. Res. Soc. Symp. Proc. 693, I6.19 (2002).Google Scholar