Using a specially modified ultra-high vacuum, ultra-high resolution transmission electron microscope, in-situ cleaned Si surfaces have been examined with near atomic resolution. By annealing the edges of a <110> thin Si specimen in-situ, it is found that low energy surfaces form. A surprising observation is that the {113} surface is stable and reconstructed by dimerization to a very low dangling bond density. It is also found that a 7×7 surface peridoicity can be preserved at a buried Si < 111 > / amorphous Si interface.