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Surface Structure and Electrochemical Polymerization of Mixed, Thiophene-Capped Monolayers

Published online by Cambridge University Press:  15 March 2011

Jung F. Kang ,
Katherine Harrison  and
S. Michael Kilbey II
Jung F. Kang
Affiliation:
Department of Chemical Engineering Clemson University Clemson, SC 29634-0909, U.S.A.
Katherine Harrison
Affiliation:
Department of Chemical Engineering Clemson University Clemson, SC 29634-0909, U.S.A.
S. Michael Kilbey II
Affiliation:
Department of Chemical Engineering Clemson University Clemson, SC 29634-0909, U.S.A.
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Abstract

We have investigated the growth of polythiophene from self-assembled monolayers (SAMs) that contain pendant thiophene groups using electrochemistry and atomic force microscopy. The SAMs are formed on indium tin-oxide (ITO) by coadsorption of 11-(3-thienyl)undecyltrichlorosilane (3TUTS) and undecyltrichlorosilane (UTS). By altering the composition of the underlying monolayers we can manipulate the onset of electrochemical polymerization and affect the surface topography of the resultant polythiophene layer. Films made on SAMs that have high loadings of 3TUTS have small, distinct grains, but as the monolayers become enriched in UTS, the grain size increases; however, these films are neither as rough nor as diffuse as films formed on ITO without an underlying SAM. These experiments suggest that the electrochemical growth and structure of the polythiophene layer can be manipulated by tuning the underlying SAM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 708: Symposium BB – Organic Optoelectronic Materials, Processing and Devices , 2001 , BB10.9
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

1. Sullivan, J. T., Harrison, K. E., Mizzell, J. P. III and Kilbey, S. M. II, Langmuir 16, 9797 (2000).Google Scholar
2. Harrison, K. E., Kang, J. F., Haasch, R. T. and Kilbey, S. M. II, Langmuir 17, 6560 (2001).Google Scholar
3. McCarley, R. L. and Willicut, R. J., J. Am. Chem. Soc. 120, 9296 (1998).Google Scholar
4. Willicut, R. J. and McCarley, R. L., Langmuir 11, 296 (1995).Google Scholar
5. Smela, E., Langmuir 14, 2984 (1998).Google Scholar
6. Simon, R. A., Ricco, A. J. and Wrighton, M. S., J. Am. Chem. Soc. 104, 2031 (1982).Google Scholar
7. Inaoka, S. and Collard, D. M., Langmuir 15, 3752 (1999).Google Scholar
8. Berlin, A., Zotti, G., Schiavon, G. and Zecchin, S., J. Am. Chem. Soc. 120, 13453 (1998).Google Scholar
9. Appelhans, D., Ferse, D., Adler, H.-J. P., Plieth, W., Fikus, A., Grundke, K., Schmitt, F.-J., Bayer, T. and Adolphi, B., Colloids and Surfaces 161, 203 (2000).Google Scholar
10. Liedberg, B., Yang, Z., Engquist, I., Wirde, M., Gelius, U., Götz, G., Bäuerle, P., Rummel, R.-M., Ch. Ziegler and Göpel, W., J. Phys. Chem. B 101, 5951 (1997).Google Scholar
11. Hayes, W. A., Kim, H., Yue, X., Perry, S. S. and Shannon, C., Langmuir 13, 2511 (1997).Google Scholar
12. Hayes, W. A. and Shannon, C., Langmuir 14, 1099 (1998).Google Scholar