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Surface Roughness of Silicon-Nitride Gate Insulators Deposited in a 40-MHZ Glow Discharge

Published online by Cambridge University Press:  10 February 2011

H. Meiling ,
E. Ten Grotenhuis ,
W. F. Van Der Weg ,
J. J. Hautala  and
J. F. M. Westendorp
H. Meiling
Affiliation:
Debye Institute, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands.
E. Ten Grotenhuis
Affiliation:
Debye Institute, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands.
W. F. Van Der Weg
Affiliation:
Debye Institute, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands.
J. J. Hautala
Affiliation:
Tokyo Electron America, Inc., 123 Brimbal Avenue, Beverly MA 01915, USA.
J. F. M. Westendorp
Affiliation:
Tokyo Electron America, Inc., 123 Brimbal Avenue, Beverly MA 01915, USA.
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Abstract

The surface morphology of 40-MHz PECVD SiNx films is investigated. We report on the correlation between the deposition conditions, bulk properties, and surface roughness of these TFT insulators. The roughness is measured with atomic-force microscopy, AFM. A link will be presented between the AFM properties and the effects of hydrogen dilution during deposition: gas composition and rf-power-density (P) dependences will be discussed. An increase of the surface roughness to 3.7 nm is observed upon H2 dilution and P increase, ascribed to enhanced ion bombardment of the surface during growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 99
Copyright
Copyright © Materials Research Society 1996

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