Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-25T17:59:05.387Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface roughness evolution of a-Si:H growth and its relation to the growth mechanism

Published online by Cambridge University Press:  17 March 2011

A.H.M. Smets ,
D.C. Schram  and
M.C.M. van de Sanden
A.H.M. Smets
Affiliation:
Eindhoven University of Technology, Department of Applied Physics, Center for Plasma Physics and Radiation Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands Eindhoven University of Technology, Department of Applied Physics, Center for Plasma Physics and Radiation Technology, P.O. Box 513, 5600 MB Eindhoven, The [email protected]
D.C. Schram
Affiliation:
Eindhoven University of Technology, Department of Applied Physics, Center for Plasma Physics and Radiation Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
M.C.M. van de Sanden
Affiliation:
Eindhoven University of Technology, Department of Applied Physics, Center for Plasma Physics and Radiation Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands Eindhoven University of Technology, Department of Applied Physics, Center for Plasma Physics and Radiation Technology, P.O. Box 513, 5600 MB Eindhoven, The [email protected]
Get access

Abstract

The post-initial growth dynamic scaling exponent β, which describes the surface roughness evolution in time, is determined for a-Si:H growth using in situ single wavelength (632.8 nm) rotating compensator ellipsometry. β is measured as function of the substrate temperature for three different growth rates 2, 5 and 22 Ås-1 under conditions where SiH3 dominantly contributes to growth. β (≤ 0.5) decreases with increasing substrate temperature and does not strongly depend on the growth rate within the range of growth rates. A roughness evolution model is proposed, based upon a random generation of active growth sites and a subsequent site dependent surface diffusion process. The measured β temperature dependence can be simulated with an activated site hopping activation energy of about 1.0 eV. This activation energy is much higher than what would be expected from a model based upon the diffusion of physisorbed silyl SiH3 radical and suggests therefore another mechanism which is responsible for the surface smoothening during a-Si:H growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A7.6
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Tanenbaum, D.M., Laracuente, A.L. and Gallagher, A.C., Phys. Rev. B 56, 4243 (1997)Google Scholar
[2]Collins, R.W. and Yang, B.Y., J. Vac. Sci. Technol. B 7, 1155 (1989)Google Scholar
[3]Flewitt, A.J., Robertson, J. and Milne, W.I., J. Appl. Phys. 85, 8032 (1999)Google Scholar
[4]Canillas, A., Bertran, E., Andújar, J.L. and Drévillon, B., J. Appl. Phys. 68, 2753 (1990)Google Scholar
[5]Family, F. and Vicsek, T., J. Phys. A 18, L75 (1985)Google Scholar
[6]Kondo, M. et al. , J. Non-Cryst. Solids 227–230, 890 (1998)Google Scholar
[7]Ikuta, K., Toyoshima, Y., Yamasaki, S., Matsuda, A. and Tanaka, K., Mat. Res. Soc. Symp. Proc. 420, 413 (1996)Google Scholar
[8]Severens, R.J. et al. , Appl. Phys. Lett. 67, 491 (1995)Google Scholar
[9]Sanden, M.C.M. van de et al. , Plasma Sources Sci. Technol. 5, 268 (1996)Google Scholar
[10]Smets, A.H.M., Smit, C., Korevaar, B.A., Kessels, W.M.M., Sanden, M.C.M. van de and Schram, D.C., to be publishedGoogle Scholar
[11]Kessels, W.M.M. et al. these MRS proceedingsGoogle Scholar
[12]Smets, A.H.M., Sanden, M.C.M. van de and Schram, D.C., Thin Solid Films 343–344, 281 (1999)Google Scholar
[13]Mullins, W.W., J. Appl. Phys. 30, 77 (1959)Google Scholar
[14]Herring, C., J. Appl. Phys. 21, 301 (1950)Google Scholar
[15]Matsuda, A., Nomoto, K., Takeuchi, Y., Suzuki, A., Yuuki, A. and Perrin, J., Surf. Sci. 22, 50 (1990)Google Scholar
[16]Doyle, J.R., Doughty, D.A. and Gallagher, A., J. Appl. Phys. 68, 4375 (1990)Google Scholar
[17]Sarma, S. Das and Tamborenea, P., Phys. Rev. Lett. 66, 325 (1991)Google Scholar
[18]Toyoshima, Y., Arai, K., Matsuda, A. and Tanaka, K., J. Appl. Phys. 56, 1540 (1990)Google Scholar
[19]Robertson, J., J. Appl. Phys. 87, 2608 (2000)Google Scholar