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Surface Roughness Evolution in Amorphous Tantalum Oxide Films Deposited by Pulsed Reactive Sputtering

Published online by Cambridge University Press:  11 February 2011

Pushkar Jain ,
Jasbir S. Juneja ,
Tansel Karabacak ,
Eugene J. Rymaszewski  and
Toh –Ming Lu
Pushkar Jain
Affiliation:
Center of Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180–3590, USATel: 518–276–6032, Fax: 518–276–8761
Jasbir S. Juneja
Affiliation:
Center of Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180–3590, USATel: 518–276–6032, Fax: 518–276–8761
Tansel Karabacak
Affiliation:
Center of Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180–3590, USATel: 518–276–6032, Fax: 518–276–8761
Eugene J. Rymaszewski
Affiliation:
Center of Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180–3590, USATel: 518–276–6032, Fax: 518–276–8761
Toh –Ming Lu
Affiliation:
Center of Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180–3590, USATel: 518–276–6032, Fax: 518–276–8761
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Abstract

The growth front roughness of Ta2O5 amorphous films grown by pulsed plasma d.c. reactive sputtering has been investigated using atomic force microscopy. Film deposition during reactive sputter deposition is explained based on dynamic scaling hypothesis in which both time and space scaling are considered simultaneously. The interface width w increases as a power law with deposition time t, w ∼ tβ, with β = 0.45 ± 0.03. The lateral correlation length ξ grows as ξ ∼ t1/z, with 1/z = 0.61 ± 0.07. The roughness exponent extracted from the slope of height-height correlation analysis is α = 0.79 ± 0.04. The results are similar to that obtained by sputtering of elemental materials, and do not fit to any of the presently known growth models. Monte Carlo simulations were carried out based on a recently developed re-emission model, where incident flux distribution, shadowing, sticking coefficient, and surface diffusion mechanisms were accounted for in the deposition process. An important finding is that sticking coefficient must be less than unity to obtain the observed β value (∼0.45).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 749: Symposium W – Morphological and Compositional Evolution of Thin Films , 2002 , W5.11
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Hashimoto, C., Oikawa, H., and Honma, N., IEEE Trans. Electron Devices 36, 14 (1989).Google Scholar
2. Lo, G. Q., Kwong, D. L., Fazan, P. C., Mathews, V. K., and Sandler, N., IEEE Electron Device Lett. 14, 216 (1993).Google Scholar
3. Chaneliere, C., Autran, J. L., Devine, R. A. B., and Balland, B., Mater. Sci. Eng. R. 22, 269 (1998).Google Scholar
4. Kim, J.-Y., Garg, A., Rymaszewski, E.J., and Lu, T.-M., IEEE Trans. Comp. Packag. Technol. 24 (3), 526 (2001).Google Scholar
5. Zhao, Y.–P., Wang, G.-C, Lu, T.-M, Palasantas, G., and De Hosson, J.Th.M., Phys. Rev. B60, 9157 (1999).Google Scholar
6. Drotar, J.T., Zhao, Y.–P., Lu, T.-M, and Wang, G.-C, Phys. Rev. B61, 3012 (2000).Google Scholar
7. Drotar, J.T., Zhao, Y.–P., Lu, T.-M, and Wang, G.-C, Phys. Rev. B62, 2118 (2000).Google Scholar
8. Wu, X. M., Wu, P. K., lu, T.-M, and Rymaszewski, E. J., Appl. Phys. Lett. 62 (25), 3264 (1993).Google Scholar
9. Nielsen, M. C., Kim, J.-Y, Rymaszewski, E. J., Lu, T-M, Kumar, A., and Bakhru, H., IEEE Trans. Comp., Packag. Manufact. Technol. B. 21 (3), 274 (1998).Google Scholar
10. Sproul, W. D., Graham, M. E., Wong, M. S., Lopez, S., Li, D., and Scholl, R. A., J. Vac. Sci. Technol. A 13, 1188 (1995).Google Scholar
11. Lu, T.-M., Yang, H.-N., and Wang, G.-C., in Fractal Aspects of Materials, edited by Family, F., Meakin, P., Sapoval, B., and Wool, R., Mat. Res. Soc. Symp. Proc. 367, 283 (1995).Google Scholar
12. Zhao, Y.-P., Wang, G.-C., and Lu, T.-M., Characterization of Amorphous and Crystalline Rough Surfaces: Principles and Applications, (Academic Press, San Diego, 2000).Google Scholar
13. Aue, J. and De Hosson, J.Th.M., Appl. Phys. Lett. 71, 1347 (1997).Google Scholar
14. Hudspeth, Q.M., Nangle, K.P., Zhao, Y.-P., Karabacak, T.,, Nguyen, C.V., Meyyappan, M., Wang, G.C., and Lu, T.-M., Surface Science, 515/2–3, 453461(2002).Google Scholar
15. Barabasi, A.-L. and Stanley, H. E., Fractal Concepts in Surface Growth (Cambridge University, Cambridge, England, 1995.Google Scholar
16. See Refs. 3 and You, H., Chiarello, R. P., Kim, H. K., and Vadervoort, K. G., Phys. Rev. Lett 70, 2900 (1993);Google Scholar
Lita, A. E. and Sanchez, J. E., Phys. Rev. B61, 7692 (2000);Google Scholar
Lita, A. E. and Sanchez, J. E., J. Appl. Phys. 85, 876 (1999).Google Scholar
17. Family, F. and Vicsek, T., Dynamics of Fractal Surfaces (World Scientific, Singapore, 1991).Google Scholar
18. Karunasiri, R. P. U., Bruinsma, R., and Rudnick, J., Phys. Rev. Lett. 62, 788 (1989).Google Scholar
19. Yao, J.-H. and Guo, H., Phys. Rev. E 47, 1007 (1993).Google Scholar
20. Karabacak, T., Zhao, Y.-P., Wang, G.-C., Lu, T.-M., Phys. Rev. B66, 075329 (2002).Google Scholar