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Surface Roughening and Composition Modulation of ZnSe-related II-VI epitaxial films

Published online by Cambridge University Press:  03 September 2012

Shigetaka Tomiya
Affiliation:
Sony Corporation Research Center, 174, Fujitsuka Hodogaya, Yokohama, 240 Japan
Hironori Tsukamoto
Affiliation:
Sony Corporation Research Center, 174, Fujitsuka Hodogaya, Yokohama, 240 Japan
Satoshi Itoh
Affiliation:
Sony Corporation Research Center, 174, Fujitsuka Hodogaya, Yokohama, 240 Japan
Kazushi Nakano
Affiliation:
Sony Corporation Research Center, 174, Fujitsuka Hodogaya, Yokohama, 240 Japan
Etsuo Morita
Affiliation:
Sony Corporation Research Center, 174, Fujitsuka Hodogaya, Yokohama, 240 Japan
Akira Ishibashi
Affiliation:
Sony Corporation Research Center, 174, Fujitsuka Hodogaya, Yokohama, 240 Japan
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Abstract

We have investigated ZnSSe and ZnMgSSe epitaxial layers lattice-matched to GaAs (001) substrates grown by molecular beam epitaxy using atomic force microscopy and transmission electron microscopy. Under II-rich conditions with c(2x2) surface reconstruction, surface morphology exhibited corrugation aligned in the [1ī0] direction and composition modulation was observed in the same [1ī0] direction. Under VI-rich condition with (2x1) surface reconstruction, the surface morphology becomes rounded grain-like and composition modulation was not observed. The formation of composition modulation is associated with the surface corrugated structures.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

1 Nakayama, N., Okuyama, H., Kato, E., Itoh, S., Ozawa, M., Ohata, T., Nakano, K., Ikeda, M., Ishibashi, A. and Mori, Y., Electron Lett. 30, 568 (1994).Google Scholar
2 Hua, G. C. , Otsuka, N., Grillo, D.C., Han, J., He, L., and Gunshor, R.L., J. Crystal Growth 138, 367 (1994).Google Scholar
3 Kuo, L. H., Salamanca-Riba, L., Wu, B. J., DePuydt, J. M., Haugen, G.M., CHeng, H., Guha, S., and Hasse, M.A., Appl. Phys. Lett. 65, 1230 (1994).Google Scholar
4 Okuyama, H., Kawasumi, T., Ishibashi, A. and Ikeda, M. (to be published)Google Scholar
5 Tomiya, S. Minatoya, R., Tsukamoto, H., Itoh, S., Nakano, K., Morita, E., Ishibashi, A., ICPS proceedings 1079, 3 (1996); (submitted to J. Appl. Phys.)Google Scholar
6 Guo, H., J. Mech. Phys. Solids 39, 443 (1991).Google Scholar
7 Srolovitz, D. J., Actametall. 37, 621 (1989).Google Scholar
8 Okuyama, H., Nakano, K., Miyajima, T., and Akimoto, K., Jpn. J. Appl. Phys., 30, L1620 (1991).Google Scholar